350 rub
Journal Nonlinear World №2 for 2014 г.
Article in number:
Electronic transport in the strongly correlated surface Si(111)7×7
Keywords: surface conductivity Si(111)7&#215 7 surface strongly correlated systems
Authors:
A.B. Odobescu - Junior Research Scientist, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences. E-mail: arty@cplire.ru
S.V. Zaitcev-Zotov - Dr. Sc. (Phys.-Math.), Head of Laboratory, Kotel-nikov Institute of Radio Engineering, and Electronics Russian Academy of Sciences
Abstract:
The conductivity of the surface Si(111)7×7 as a function of temperature (35-300 K) has been studied. The surface conductivity is characterized by the Efros-Shklovskii law. It was supposed, that free electrons on the surface are localized on the dimers, which forms from the center adatoms, and surface conductance is associated with hopping conductance from occupied to an empty dimer. The experimentally obtained localization length of the electron matches the dimer size.
Pages: 22-25
References

  1. Gantmaxer V. F. E'lektrony' v neuporyadochenny'x sredax. M.: Fizmatlit. 2005.
  2. Losio R., Altmann K. N. and Himpsel F.J. Fermi surface of Si(111)7×7 // Phys. Rev. 2000. V. 61. P. 10845.
  3. Ortega J., Flores F. and Yeyati A.L. Electron correlation effects in the Si(111)7×7 surface // Phys. Rev. 1998. V. 58. p. 4584.
  4. Yoo K., Matsuda I., Hasegawa S. and Hasegawa Y. Nonmetallic transport property of the Si(111)7×7 surface // Phys. Rev. 2003. V. 68. P. 113303.
  5. Odobescu A.B. and Zaitsev-Zotov S.V.J. Energy gap revealed by  low-temperature scanning-tunnelling spectroscopy of the Si(111)7×7 surface in illuminated slightly doped crystals // Phys.: Condens. Matter. 2012. V. 24. P. 395003.
  6. Odobesko A.B., Loginov B.A., Loginov V.B., Nasretdinova V.F., Zajczev-Zotov S.V. Sverxvy'sokovakuumnoe ustrojstvo dlya izmereniya provodimosti poverxnostny'x struktur chety'rexkontaktny'm metodom na osnove refrizheratora zamknutogo czikla // Pribornaya i texnicheskaya e'kspluatacziya. 2010. № 3. C. 152 - 158.
  7. Shklovskii B. I., Efros A. L. Electronic properties of doped semiconductors. Springer-Verlag. 1984.
  8. D-angelo M., Takase K., Miyata N., Hirahara T. and Hasegawa S., Nishide A., Ogawa M. and Matsuda I. Conductivity of the Si(111)7×7 dangling-bond state // Phys. Rev. 2009. V. 79. P. 035318.