350 rub
Journal Nonlinear World №2 for 2013 г.
Article in number:
The dependence of InGaN/GaN LEDs quantum efficiency reduce with the features of the volt-farad characteristics during operation
Keywords: light-emitting diodes degradation quantum efficiency volt-farad characteristics
Authors:
V.A. Sergeev, I.V. Frolov, A.A. Shirokov
Abstract:
The dependence of InGaN/GaN LEDs quantum efficiency reduce rate with the features of the volt-farad characteristics during operation is presented.
Pages: 90-91
References
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  2. Закгейм А.П. и др. // ФТП. 2012. Т. 46. Вып. 2. С. 219-223.