N.Z. Safiullin, R.S. Zagidullin

During the lithographic operations through organic and inorganic materials are carried out physical and chemical transformations that are nonlinear and stochastic. In this case the distortion of the picture is of an electronic circuit, at least, a function of the fluctuating three processes: obtaining an image pattern in the resist, etching the film and combine layers, depending on fluctuations in the thickness of the photoresist film, and as within the surfaces of substrates and the substrate to the substrate. All this creates a problem of increasing the scientific yield. However, the known literature [1-3], there are no effective methods of solving problems are absent. In connection with what the article proposes statistical techniques to improve the accuracy of transfer of the photomask pattern elements on the substrate surface. The purpose of the article is to increase the yield through the development of effective schemes of production. Functional transformations of the sizes of drawing of a photo mask in the course of exhibiting, displays fotorezist and film etchings are considered; expressions of nonlinear distortions of drawing of a photo mask in technological processes of exhibiting, display fotorezist and etchings of a film are received and with their use the system of optimum photo masks is synthesized. The new scheme of the organization of manufacture of the film structures, allowing to raise an exit suitable at the expense of use of system of photo masks according to industrial fluctuations of thickness fotorezist and films is offered