G.R. Sagatelyan1, S.Yu. Novikov2, A.V. Shishlov3

1–3 Bauman Moscow State Technical University (Moscow, Russia)
1 h_sagatelyan@mail.ru, 2 chyjd@yandex.ru, 3 orange_a@list.ru

The object of research is magnetron sputtering technology, which is widely used to produce thin-film resistors due to its high deposition rate, good adhesion, and the ability to scale processes. The key problem in the production of such resistors is to ensure an accurate and reproducible value of electrical resistance, which is determined by a complex of structural and kinetic factors depending on the technological modes of spraying. The lack of systematic data on the combined effect of argon pressure and magnetron current on film resistance makes it difficult to predict resistor ratings at the technological design stage.

The purpose of the study – to establish quantitative and qualitative patterns of the influence of argon pressure and magnetron current on the electrical resistance of thin-film chromium resistors obtained by DC magnetron sputtering, as well as to determine the optimal modes to achieve reproducible results.

It has been experimentally established that changes in argon pressure and magnetron current lead to a non-monotonic change in resistance. At a fixed low current, an increase in pressure causes a decrease in resistance, whereas at a fixed high current, an increase in resistance is observed. An increase in current at a fixed pressure in all the studied modes leads to a decrease in resistance. The revealed patterns are explained in terms of optimizing mechanical stresses, grain size changes, adatom mobility, and deposition rate.

The results obtained make it possible to predict the nominal values of thin-film resistors at the technological design stage, optimize sputtering modes to achieve the required electrophysical characteristics and increase the reproducibility of parameters during mass production. The developed approaches can be used for other resistive materials and technological configurations.

Sagatelyan G.R., Novikov S.Yu., Shishlov A.V. The influence of technological factors of magnetron sputtering on the resistance of thin-film resistors // Nanotechnology: development and applications – XXI century. 2026. V. 18. № 2. P. 38–46. DOI: https://doi.org/10. 18127/j22250980-202602-04

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