N.V. Cherkesova1, G.A. Mustafaev2, A.G. Mustafaev3

1,2 Kabardino-Balkarian State University, (Nalchik, Russia)
3 Dagestan State University of National Economy (Makhachkala, Russia)
1 natasha07_2002@mail.ru, 2 zoone@mail.ru, 3 arslan_mustafaev@mail.ru

When an electron beam is applied to the surface of a semiconductor wafer during electron lithography, defects arise in semiconductor and dielectric materials, which worsen the characteristics of the formed devices. The electrical properties of doped layers also depend on the so-called radiation structural defects that arise when the semiconductor surface is bombarded with electrons. These defects create highly disordered areas near the semiconductor surface. To develop a design and technological solution based on a multilayer resist with an intermediate layer of refractory metal for reducing radiation defects that arise during electron lithography. In this work, the densities of positively charged and neutral traps in oxide were studied using the avalanche injection method. The dependence of the positive charge in the MIS-structure on the thickness of the metal layer was determined, and that tungsten is the most suitable material. The results obtained indicate the effectiveness of using a multilayer resist with an intermediate layer of refractory metal to reduce radiation defects in MIS-structures. The developed technology for reducing radiation defects, based on a multilayer resist and an intermediate metal layer, will make it possible to obtain semiconductor devices with improved electrophysical parameters.

Cherkesova N.V., Mustafaev G.A., Mustafaev A.G. Reduction of radiation defects in MIS structures using a multilayer resist based on a refractory metal. Nanotechnology: development and applications – XXI century. 2025. V. 17. № 4. P. 46–50. DOI: https://doi.org/10.18127/ j22250980-202504-05 (in Russian)

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