A.V. Khoteeva1, D.R. Sabitov2, A.A. Marmalyuk3

1–3 POLYUS Research Institute of M.F. Stelmakh (Moscow, Russia)
1,3 Patrice Lumumba Peoples' Friendship University of Russia (Moscow, Russia)
1 1132236558@yandex.ru, 2 damsab@mail.ru, 3 MarmalyukAA@niipolyus.ru

Doping of p-GaN epitaxial layers (EL) and p-AlxGa1-xN solid solutions with magnesium impurity is complicated by the self-compensation effect associated with the appearance of donor states in the bandgap at a certain concentration of introduced acceptor atoms. Based on the spectra obtained by the photoluminescence method, it is possible to track the appearance of self-compensation in (Al)GaN:Mg EL and establish the optimal consumption of the introduced magnesium impurity, which allows obtaining a relatively high concentration of the majority charge carriers.

Objective – Study of charge carrier concentration dependence in GaN:Mg and Al0.2Ga0.8N:Mg on Mg dopant flow rates, determination of optimal doping parameters, and investigation of photoluminescence spectral features in the obtained epitaxial structures.
Results: The photoluminescence spectra of GaN:Mg and Al0.2Ga0.8N:Mg samples with varying dopant flow rates were measured. Analysis of these photoluminescence spectra enables determination of optimal growth conditions for p-type (Al)GaN epitaxial structures that avoid self-compensation effects detrimental to charge carrier concentration.

Photoluminescence spectroscopy monitoring of self-compensation effects enables fabrication of high-quality p-(Al)GaN epitaxial structures suitable for optoelectronic device applications.

Khoteeva A.V., Sabitov D.R., Marmalyuk A.A. Photoluminescence spectral features of mg-doped (Al)GaN epitaxial layers. Nanotechnology: development and applications – XXI century. 2025. V. 17. № 2. P. 48–54. DOI: https://doi.org/10.18127/ j22250980-202502-05 (in Russian)

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