350 rub
Journal Nanotechnology : the development , application - XXI Century №1 for 2025 г.
Article in number:
Low-Noise Bandgap Voltage Reference
Type of article: scientific article
DOI: https://doi.org/10.18127/j22250980-202501-04
UDC: 621.382
Authors:

P.A. Kondratovich1, Yu.E. Korchagin2, A.V. Tuchin3, K.D. Titov4

14 Voronezh State University (Voronezh, Russia)
1 pkondr@mail.ru, kondratovich.pa@gmail.com, 2 korchagin@phys.vsu.ru, 3 24in@mail.ru, 4 titovkd@bk.ru

Abstract:

At present, reference voltage sources (ION) are still a typical unit for building most digital and analog systems. It is necessary to create a new reference voltage source capable of operating over a wide range of voltages.

Purpose – develop a calibrated low noise reference voltage source.

A new reference voltage source is presented with the possibility of correcting the reference voltage nominal and the current-frequency coefficient, capable of operating in a wide range of supply voltages from 2.5 to 5.5 V and a voltage current of less than 100 μA, having a low flicker noise level, with root-mean-square deviation of less than 4 μV in the 0.01-25 Hz band. After trimming, the ION has a temperature coefficient of less than 5 ppm/m111 in the temperature diapa zone from − 60-150 ° C. The reference voltage is 1.25 V, with the ability to adjust with a step of 2-3 mV in the range of 1.24-1.26 V. This ION is made using CMOS technology 180 nm.

Based on the results obtained, it was found that in some applications, such as analog-to-digital (ADC) and digital-to-analog (DAC) converters, the accuracy and noise characteristics of the ION have a significant impact on the performance of the entire system.

Pages: 35-44
For citation

Kondratovich P.A., Korchagin Yu.E., Tuchin A.V., Titov K.D. Low-Noise Bandgap Voltage Reference. Nanotechnology: development and applications – XXI century. 2025. V. 17. № 1. P. 35–44. DOI: https://doi.org/10.18127/ j22250980-202501-04 (in Russian)

References
  1. Razavi B. Design of Analog CMOS Integrated Circuits. Second Edition. Published by McGraw-Hill Education. 2 Penn Plaza. New York. 2017.
  2. Hilbiber D. A New Semiconductor Voltage Standard. ISSCC Dig. of Tech. Papers. P. 32–33. February 1964.
  3. Gunawan M., Meijer G., Huijsing J.H. A curvature-corrected lowvoltage bandgap reference. IEEE Journal of Solid-state Circuits. 1993.
  4. Kapil Jainwal, Mukul Sarkar, Kushal Shahz Analysis and validation of low-frequency noise reduction in MOSFET circuits using variable duty cycle switched biasing. IEEE Journal of the Electron Devices Society. P. 420–431. February 2018.
  5. Guang Ge, Cheng Zhang, Gian Hoogzaad, Kofi A. A. Makinwa A Single-Trim CMOS Bandgap Reference With a Inaccuracy of 0.15% From 40°C to 125°C. IEEE International Solid-State Circuits Conference (ISSCC). March 2010.
  6. Herbst S. A Low-Noise Bandgap Voltage Reference Employing Dynamic Element Matching. Massachusetts Institute of Technology. September 2011.
  7. Johan F. Witte, Kofi A. A. Makinwa, Johan H. Huijsing. Dynamic Offset Compensated CMOS Amplifiers 2009.
  8. Patent na izobretenie № 2813175. Maloshumyashchij istochnik opornogo napryazheniya. Zayavka № 2023115241.
Date of receipt: 2.12.2024
Approved after review: 16.12.2024
Accepted for publication: 27.02.2025