350 rub
Journal Nanotechnology : the development , application - XXI Century №1 for 2012 г.
Article in number:
Formation of Ferroelectric Heterostructures with Controlled Nanostructures for Micro- and Nanoelectronic Devices
Keywords: ferroelectrics thin film PZT ferroelectric random access memory chemical solution deposition
Authors:
K.A. Vorotilov, A.S. Sigov, A.A. Romanov, P.R. Mashevich
Abstract:
Compatible with CMOS process preparation techniques of textured ferroelectric nanostructures on the base of PZT thin films are developed. Key issues of precursor synthesis governing crystalline and electrical properties of heterostructures prepared by chemical solution deposition (CSD) are discovered. It is shown that alkoxide root based on dissolution of titanium and zirconium alkoxides in methoxyethanol and reaction with the lead acetate results in a higher structural perfection in contrast to metal organic decomposition (MOD) technique. Crystallization process of PZT layer in ferroelectric Si-SiO2/ (PSG)?Ti/ (TiO2)-Pt-PZT capacitor structure of ferroelectric random access memory (FRAM) is studied. It is shown that crystallization of PZT layer proceeds directly on {111} platinum interface in the correspondence with its crystalline structure. Heterogeneous nucleation of perovskite grains on the interface dominates in system with low degree of interface boundary in platinum layer. Possibility of practical realization of the developed process in 200 mm FRAM manufacturing is demonstrated.
Pages: 4-13
References
  1. Воротилов К.А., Сигов А.С. Сегнетоэлектрические запоминающие устройства: перспективные технологии и материалы. // Нано- и Микросистемная техника. 2008. № 10. С. 30-42.
  2. Scott J.F. New developments on FRAMs: 3D structures and all-perovskite FETs // Mat. Science and Eng. B. 2005. V. 120. P. 6-12.
  3. Валеев А.С., Дягилев В.Н., Львович А.А., Сладков В.И., Трайнис Т.П., Воротилов К.А., Певцов Е.Ф., Петровский В.И., Сигов А.С., Яновская М.И., Обвинцева И.Е., Ковсман Е.П., Соловьева Л.И. Интегрированные сегнетоэлектрические устройства // Электронная промышленность. 1994. Вып. 6. С. 75-79.
  4. Валеев А., Воротилов К. Сегнетоэлектрические пленки. Возможность интеграции с технологией ИС // Электроника: Наука, Технология, Бизнес. 1998. Т. 3-4. С. 75-78.
  5. Валеев А.С., Воротилов К.А., Сигов А.С. Интеграция сегнетоэлектрических пленок с технологией СБИС // Сборник трудов 1-й научно-технической конференции АООТ «НИИМЭ и завод «Микрон» (Зеленоград, 1998) / под ред. Г.Я. Красникова. М. 1998. С. 60-69.
  6. Budd K.D., Dey S.K., Payne D.A. Sol-gel processing of PbTiO3, PbZrO3, PZT and PLZT thin films // Brit. Ceram. Proc. 1985. No. 36. P. 107-121.
  7. Соловьева Л.И., Обвинцева И.Е., Яновская М.И., Воротилов К.А., Васильев В.А. Сегнетоэлектрические пленки цирконата-титаната свинца, полученные золь-гель методом с использованием алкоголятов металлов // Неорганические материалы. 1996. Т. 32. № 7. С.866-874.
  8. Yanovskaya M.I., Obvintseva I.E., Solovyova L.I., Kovsman E.P., Vorotilov K.A., Vasilyev V.A. Alkoxy-derived ferroelectric PZT films: the effect of lead acetate dehydration techniques and lead content in the electrochemically prepared solutions on the properties of the films // Integrated Ferroelectrics. 1998. V. 19. P. 193-209.
  9. Ramamurthy S.D., Payne D.A. Structural Investigations of Prehydrolyzed Precursors Used in the Sol-Gel Processing of Lead Titanate // J.Amer.Ceram.Soc. 1990. V. 73. No. 8. P. 2547-2551.
  10. Klee M., Eusemann R., Waser R., Brand W., Van Hal H. Processing and electrical properties of Pb(ZrxTi1-x)O3 (x=0.2-0.75) films: comparison of metal-organic decomposition and sol-gel processes // J. Appl. Phys. 1992. V. 72. № 4. P.1566-1576.
  11. Nouwen R., Mullens J., Franco D., Yperman J., Van Poucke L.C. Use of thermogravimetric analysis-Fourier transform infrared spectroscopy in the study of the reaction mechanism of the preparation of Pb(Zr, Ti)O3 by the sol-gel method // Vibrational Spectroscopy. 1996. V. 10. № 2 P. 291-299.
  12. Schneller T., Waser R. Chemical modifications of Pb(Zr0.3Ti0.7)O3 precursor solutions and their influence on the morphological and electrical properties of the resulting thin films // J. Sol-Gel Science and Technology. 2007. V.42. No. 3. P. 337-352.
  13. Schwartz R.W., Bunker B.C., Dimos D.B., Assink R.A., Tuttle B.A., Tallant D.R., Weinstock I.A. Solution chemistry effects in Pb(Zr, Ti)O3 thin film processing // Integrated Ferroelectrics. 1992. V.2. No. 1. P. 243-254.
  14. Fukushima J., Kodaira K., Matsushita T. Preparation of ferroelectric PZT films by thermal decomposition of organometallic compounds // J. Mater. Sci. 1984. V. 19. No. 2. P. 595-598.
  15. Vorotilov K.A., Yanovskaya M.I., Dorokhova O.A. Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study // Integrated Ferroelectrics. 1993. V. 3. P. 33-49.
  16. Yanovskaya M.I., Solov'eva L.I., Kovsman E.P., Obvinzeva I.E., Vorotilov K.A., Turova N.Ya. Anodic dissolution of metals in methoxyethanol - a way to new precursors for sol-gel technology // Integrated Ferroelectrics. 1994. V. 4. P. 275-279.
  17. Zhigalina O. M., Burmistrova P. V., Vasiliev A. L., Roddatis V. V., Sigov A. S., Vorotilov K. A. Microstructure of PZT Capacitor Structures. Ferroelectrics. 2003. V.286. P. 311-320.
  18. Schwartz R.W., Voigt J.A., Tuttle B.A., Payne D.A., Reichert T.L., DaSalla R.S. Comments on the effects of solution precursor characteristics and thermal processing conditions on the crystallization behavior of sol-gel derived lead zirconate titanate thin films // J. Mat. Res. 1997. V. 12. No. 2. P.444-456.
  19. Chen S.-Y., Chen I.W. Temperature-Time Texture Transition of Pb(Zr1−xTix)O3 Thin Films: I, Role of Pb-rich Intermediate Phases // Am. Ceram. Soc. 1994. V. 77. No. 9. P. 2332-2336.
  20. Norga G.J., Vasiliu F., Fe L., Wouters D.J., Van Der Biest O. Role of fluorite phase formation in the texture selection of sol-gel prepared PZT films on Pt electrode layers //J. Mat. Res. 2003. V. 18. P.1232-1238.
  21. Song Y.J., Zhu Y., Desu S.B. Low temperature fabrication and properties of sol-gel derived (111) oriented Pb(Zr1 - xTix)O3 thin films // Appl. Phys. Lett. 1998. V. 72. № 21. P. 2686-2688.
  22. Brooks K. G., Reaney I. M., Klissurska I. M., Huang Y., Bursill L. A. Orientation of Rapidly Thermally Annealed Lead Zirconate Titanate Thin Films on (111) Pt Substrates // J. Mater. Res. 1994. V. 9. No. 10.  P. 2540-2553.
  23. Liu Y., Phule P.P. Nucleation- or growth-controlled orientation development in chemically derived ferroelectric lead zirconate titanate (Pb(ZrxTi1−x)O3, x = 0.4) thin films // J. Am. Ceram. Soc. 1996. V. 79. No. 2. P. 495-498.
  24. О.М. Жигалина, К.А. Воротилов, Д.Н. Хмелениин, А.С. Сигов. Структурные особенности пленок цирконата-титаната свинца, сфорсированных методом химического осаждения из растворов с различным содержанием свинца // Нано-и Микросистемная техника. 2008. № 11. С. 17-22.
  25. Vorotilov K.A., Yanovskaya M.I., Turevskaya E.P., Sigov A.S. Sol-gel derived ferroelectric thin films: avenues for control of microstructural and electric properties // J.Sol-Gel Science and Technology. 1999. V. 16. P. 109-118.