350 rub
Journal №3 for 2014 г.
Article in number:
Specific features of defect formation in nonstoichiometric nano-sized PZT films prepared by the sol-gel method
Authors:
К.A. Vorotilov - Dr. Sc. (Eng.), Professor, Moscow State Technical University of Radio Engineering, Electronics and Automation. Е-mail: vorotilov@mirea.ru N.V. Muchin - Ph. D. (Eng.), Saint Petersburg Electrotechnical University «LETI» (St. Petersburg). Е-mail: muhinnv_leti@mail.ru
Abstract:
We studied ferroelectric properties of PZT ferroelectric films of 180-200 nm thick prepared by the sol-gel method. It was found that at high temperature laser annealing of the films, local disturbances of PZT stoichiometric composition were created due to oxygen and lead segregation on the grain boundaries. As the result, the double charged layers were formed near the phase boundaries and the polarization was pinned in those regions thus decreasing the value of field switchable polarization. We observed that the lead excess in the film forming solution gave rise to the grain boundaries area increase and to lowering of the film structure degree of order. The films with better ferroelectric properties were prepared from the solutions with 5-15% lead excess.
Pages: 18-22
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