350 rub
Journal №2 for 2012 г.
Article in number:
Нysteretic magnetoresistance in stress controlled magnetic memory device
Authors:
Y. Dusch, V. Rudenko, N. Tiercelin, S. Giordano, V. Preobrazhensk, P. Pernod
Abstract:
We present here a concept of data recording in memory devices based on spin reorientation transition in magnetostrictive films or stress-mediated multiferroics. Retrieval of information can be non-destructively made by GMR reading. The principle of reading is demonstrated experimentally on a stress controlled FeCo(2nm) /TbCo2(6nm) /FeCo(2nm)(2nm) /Cu(3nm) /FeCo(2nm) /TbCo2(4nm) /FeCo(2nm) nanostructured layer.
Pages: 44-50
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