A. E. Anurov, E. A. Grinkin, A. A. Zhukov

One of actual problems in the microsystem technics is creation of the elastic executive elements used in actuators, pressure sensors, shocks-sensors and other microelectromechanical systems. At manufacturing of such devices it is often applied the technology of the superficial microprocessing which essence consists in consecutive formation of an elastic element on a surface of a «sacrificial» layer with its subsequent removal. The gool of the work is optimization of plasma-chemical etchings of a «sacrificial» layer in manufacturing of executive elements of microsystem technics. During the experiment spent on test samples with application of inductive-connected oxygen containing plasma, there have been received dependences of speed of etching of a «sacrificial» layer from pressure of HF-displacement at various working pressure in the chamber, degree of anisotropy of etching of a "sacrificial» layer from pressure of HF-displacement at various working pressure in the chamber and speed of etching of a mask from aluminium from capacity of displacement at various HF-capacities. It is shown that the increase pressure of HF-displacement in all cases leads to growth of a corner of etching: application of pressure of HF-displacement 150-160 V provides anisotropy of etching of an order 0.1 and speed of etching polyimide about two micrometers per minute. Influence of working pressure in the chamber on anisotropy and speed of etching is shown.