A.V. Korolev1, I.A. Sidorov2

1 Bauman Moscow State Technical University (Moscow, Russia)

2 LLC "Scientific and Production Innovative Company "HYPERION" (Moscow, Russia)

1 teleret@mail.ru, 2 igorasidorov@yandex.ru

Advances in the development of high-power microwave transistors paved the way for developing solid-state high-power amplifiers of microwave transmitters. Increasing the output power of the transmitting channel of T/R modules based on microwave monolithic integrated circuits is a complex technological task, the solution of which makes it possible to reduce the size and weight of the equipment. In this article, we propose a criterion for evaluating the efficiency of using the crystal area of an MMIC power amplifier, based on comparing the area of the terminal stage together with the power divider and combiner and the area of the entire crystal. This approach avoids unjustifiably underestimating, since the area of the amplifier cell and the divider – combiner takes into account the necessary gaps to eliminate or reduce parasitic coupling between the circuit elements.

Korolev A.V., Sidorov I.A. Usage efficiency analysis of amplifier MMIC die area. Electromagnetic waves and electronic systems. 2025. V. 30. № 6. P. 73−77. DOI: https://doi.org/10.18127/j15604128-202506-06 (in Russian)

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