T.T. Magkoev1, D.G. Mustafaeva2

1 North Ossetian State University (Vladikavkaz, Russia)

2 North Caucasus Mining and Metallurgical Institute (State Technological University) (Vladikavkaz, Russia)

1 t_magkoev@mail.ru, 2 dzhamilya79@yandex.ru

Due to the strong dependence on the intrinsic defectiveness of structures, semiconductor compounds based on metal chalcogenides have a wide spread in kinetic properties and high growth temperatures of materials, as well as a tendency to self-compensation of defects. It has been shown that an increase in defectivity in the cation sublattice leads to a decrease in ionic conductivity in copper chalcogenides, and an increase in temperature leads to an increase in ionic conductivity due to a change in mobility. The low activation energy indicates a strong intrinsic disorder of the cation part of the lattice. In copper chalcogenides, the presence of hopping conductivity at small deviations from stoichiometry is explained by compensation and a high concentration of vacancies. Under such conditions, this activation energy is the activation energy for the movement of copper ions throughout the crystal and almost all metal ions contribute to the ionic electrical conductivity. In semiconductor compounds based on metal chalcogenides with deviations from stoichiometry, the activation energy of cationic conductivity does not change, since the defects that arise in this case do not introduce large changes in ionic conductivity with temperature. The increase in ionic conductivity with increasing temperature is due to a change in mobility, since the carrier concentration remains unchanged. The latter is determined only by the structural features of the phases. Deviation from stoichiometry in compounds makes it necessary to take into account the movement of the main charge carriers in the allowed zones, and the movement of carriers along vacancies. The properties of metal chalcogenides are largely determined by the characteristics of their preparation and depend on the relative ratio of metal and chalcogen atoms, as well as the presence of intrinsic defects and their influence on the mechanism of behavior of charge carriers and transfer phenomena.

Magkoev T.T., Mustafaeva D.G. The influence of defects on conduction processes in chalcogenide semiconductor compounds. Electromagnetic waves and electronic systems. 2024. V. 29. № 3. P. 13−17. DOI: https://doi.org/10.18127/j15604128-202403-02 (in Russian)

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