B.I. Yakubovich1

1Petersburg Nuclear Physics Institute named by B.P. Konstantinov (Leningradskaya oblast, Gatchina, Russia)

Electrical fluctuations in semiconductors are largely determined by the capture and emission of charge carriers by traps formed by structural defects. This mechanism is associated with the origin of several types of electrical noises, which are of fundamental importance. In connection with the great importance of electrical fluctuations in semiconductors caused by traps, it is expedient to develop ideas about such fluctuations and give a more complete description of them. Purpose of the work: to give a rigorous and fairly general description of electrical fluctuations in semiconductors associated with processes in traps; calculate in a fairly general form an expression for the spectrum of electrical fluctuations in semiconductors caused by traps, and determine expressions for the fluctuation spectra in the most significant cases. Electrical fluctuations in semiconductors caused by the capture and emission of charge carriers by traps are considered. When charge carriers are captured by traps in semiconductors, electrical noise is associated with fluctuations in the number of free carriers, which cause fluctuations in the conductivity of the sample, and as a result, fluctuations in the current flowing in it. The stochastic process of carriers capture and emission by the trap causes conductivity fluctuations: the conductivity changes randomly and takes one of two possible values depending on whether the carrier is captured by the trap or not. A very general case of a fluctuation process is considered, when the probability of a carrier being captured by a trap is statistically related to the time the trap is in an unfilled state, and the probability of carrier emission is statistically related to the time it is in a bound state in the trap; statistical relationships are given in a general form.

As a result, an expression is calculated for the spectrum of electrical fluctuations in semiconductors caused by traps. In the expression obtained, the intensity of fluctuations is related to the magnitude of the change in current with a change in the charge state of the trap and the frequency of the process of capture and emission of carriers by the trap; the frequency dependence of the spectral density of fluctuations is related to the distributions of the times the trap is in the free and filled states. The resulting formula gives a very general description of electrical fluctuations in semiconductors caused by traps. In the fluctuation process under consideration, the statistical relationships are given in a general form, and the traps times distributions are given in a general form. The calculated expression can be used to describe fluctuations in numerous types of semiconductors and is valid for various types of traps. It is shown in which special cases the resulting general expression goes into previously known formulas. The specific most significant cases for electrical fluctuations in semiconductors caused by traps are considered. As a result, a rigorous and fairly general description of electrical fluctuations in semiconductors caused by traps is given. Expressions are calculated for the spectra of electrical fluctuations in semiconductors caused by traps, both of a general form and for specific cases. The results obtained are essential for reducing the noise level of semiconductor devices. They can be applied to improve the quality of work and increase the reliability of electronic devices.

Yakubovich B.I. Electrical fluctuations in semiconductors caused by traps. Electromagnetic waves and electronic systems. 2023. V. 28. № 1. P. 47−53. DOI: https://doi.org/10.18127/j15604128-202301-06 (in Russian)

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