B.I. Yakubovich1

1 Petersburg Nuclear Physics Institute named by B.P. Konstantinov of (Gatchina, Russia)

The generation-recombination noise in narrow-gap semiconductors, caused by direct generation-recombination processes, was studied. This noise is one of the most important electrical noises in semiconductors and affects the operation of semiconductor devices for various purposes. As a result, it is advisable to give a fairly general and rigorous description of such noise for more complete and accurate determination of the properties and characteristics of electrical fluctuations in semiconductors and to reduce the noise of semiconductor devices. The aim of this work is a rigorous consideration of the generation-recombination noise in narrow-gap semiconductors caused by direct generation-recombination processes and the calculation of its spectrum.

Let us analyze the generation-recombination noise in narrow-gap semiconductors caused by direct generation-recombination processes. The considered type of fluctuations is due to the generation and recombination of electron-hole pairs in semiconductors. The stochastic process of generation and recombination of electron-hole pairs leads to random change in the number of free charge carriers in the sample, which causes fluctuations in the current flowing through it. The considered fluctuation process is regarded to be stationary. The probabilities of generation and recombination depend statistically on the number of free electrons and holes at given moment. Let us analyze a very general case of fluctuation process, when the probability of change in the number of free carriers is statistically related to the number of free carriers at given moment of time, with statistical relationships given in a general form. Let us calculate the spectrum of fluctuations caused by direct generation-recombination processes. As a result, an expression for the spectrum of generation-recombination noise in semiconductors caused by direct generation-recombination processes is calculated in a very general form. It can be applied to determine noise spectra in numerous semiconductor materials. In narrow-gap semiconductors, the noise caused by the considered cause often prevails over the noise caused by generation-recombination processes through traps. In such cases, the spectrum of generation-recombination noise of semiconductors is determined by the expression calculated in the article.

Main results of the article. The generation-recombination noise in narrow-gap semiconductors caused by direct generation-recombination processes is analyzed. This type of noise is considered in a more general case than it was done earlier: the statistical relationships between successive events of the fluctuation process are given in a general form. This made it possible to give a more complete and rigorous quantitative description of the noise. A general expression is calculated for the spectrum of generation-recombination noise in semiconductors caused by direct generation-recombination processes. It can be used to analyze the properties and determine the spectral characteristics of generation-recombination noise in numerous narrow-gap semiconductors.

The results obtained can be used for applied purposes. The most widely applying is possible when using in instrumentation semiconductor materials manufactured using modern technologies and having low concentration of defects, since in this case the electrical noise of semiconductor devices is often determined by generation-recombination noise caused by direct generation-recombination processes. The results of the article can be effectively used in the development of electronic devices based on narrow-gap semiconductors to reduce their noise in order to improve quality of work and increase reliability of devices.

Yakubovich B.I. Generation-recombination noise in narrow-gap semiconductors. Electromagnetic waves and electronic systems. 2022. V. 27. № 5. P. 42−47. DOI: https://doi.org/10.18127/j15604128-202205-06 (in Russian)

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