A.V. Mazin - Dr. Sc. (Eng.), Professor, Kaluga branch of the Bauman MSTU E-mail: MazinAV@Yandex.ru S.A. Adarchin - Ph. D. (Eng.), Associate Professor, Kaluga branch of the Bauman MSTU E-mail: adarchin@rambler.ru Aung Pyae Zone - Post-graduate Student, Kaluga branch of the Bauman MSTU E-mail: aungpyesone49@gmail.com

Increasing the power semiconductor devices power density associated with the use of materials having high thermal conductivity and developing methods of measuring parameters. The effectiveness of the electronic devices are strongly influenced not only the para-meters of the semiconductor material, but also the conditions of heat exchange and other factors. Technology scatter heat-removing elements of the parameters may lead to changes in the energy characteristics, which significantly reduce the potential for any high-quality semiconductor material. Therefore, an important factor necessary for the development of semiconductor electronics, is the development of methods and devices for operational control of the characteristics of the heat-removing elements. Conclusions. On the basis of the mathematical model developed methods analyzed interconnect semiconductor chips, current leads and ceramic bases Peltier elements using various contact materials. Choose and proved the best options that ensure minimal heat loss and minimal residual stresses in the structure. A parallel scheme for measuring the thermal conductivity of the substrate power electronic devices based on the use of improved Peltier elements. It is shown that the application of the proposed measurement scheme simplifies the design of the measuring device and use it to express the control parameters of substrates at their massive industrial output.

 

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