350 rub
Journal Electromagnetic Waves and Electronic Systems №8 for 2016 г.
Article in number:
Monitoring of radiation influences by using of sensors based on mis structures
Authors:
V.V. Andreev - Dr. Sc. (Eng.), Professor, Kaluga branch of the Bauman MSTU E-mail: vladimir_andreev@bmstu.ru A.V. Romanov - Post-graduate Student, Kaluga branch of the Bauman MSTU E-mail: romanov@okbmel.ru A.A. Stolyarov - Dr. Sc. (Eng.), Professor, Head of Department «Design and manufacturing of electronic equipment», Kaluga branch of the Bauman MSTU E-mail: a.a.stolyarov@bmstu.ru D.M. Akhmelkin - Post-graduate Student, Kaluga branch of the Bauman MSTU E-mail: dmitriy.akhmelkin@gmail.com
Abstract:
In this paper, we developed a sensor based on MIS structure to control the intensity of radiation and determine the integral absorbed radiation dose. Research of influence by α particles and γ radiation to MIS structures, which are in certain electrical modes, is presented. In order to research an influence of α particles to MIS structures, which are under high-field tunnel injection of electrons into dielectric, the observed samples were radiated by 239Pu source of radiation. Rate of the α particles flow was 1010 s−1∙cm−2. In order to observe an influence of γ radiation to MIS structures, we used Co60 source. We studied an influence of different radiations to MIS structures, which were in charging and discharging modes by constant current. Besides, we studied the influence when MIS structures are in mode of constant tunnel current flowing. This mode is conditioned Fowler-Nordheim injection of electrons into dielectric. The paper shows that the ionizing processes, taking place in dielectric films of MIS structures, which are in charging and discharging modes and in mode of high-field tunnel injection of electrons by impulse of constant current, could be used to register radiation. It was found that the ionization current produced during the process of irradiation of MIS-structures in the flow regime through the dielectric constant current can substantially reduce the electric field in the dielectric film. It is shown that from the analysis of the time dependence of the voltage falling on the MIS-structure in a constant current flow mode, as in the capacitance of the charge mode and in mode high-field electron injection into the dielectric, can determine the value of the ionization current. This phenomenon can be used in radiation sensors that allow to control the intensity of the radiation, and the value of the integral of the absorbed dose of ionizing radiation. To improve the metrological characteristics of the sensor control of ionizing radiation should be carried out at several fixed values of injection current and / or the charging current and the discharge capacity of the MIS structure.
Pages: 16-20
References

 

  1. Asensio L.J., Carvajal M.A., Lopez-Villanueva J.A., Vilches M., Lallena A.M., Palma A.J. Evaluation of a low-cost commercial mosfet as radiation dosimeter // Sensors and Actuators A. 2006. V. 125. P. 288−295.
  2. Ma T.P., Dressendorfer P.V. Ionizing radiation effects in MOS devices and circuits. Wiley-IEEE. 1989. 442 p.
  3. Perevertajjlo V.L. Datchiki integralnojj pogloshhennojj dozy ionizirujushhego izluchenija na osnove MOP-tranzistorov // Tekhnologija i konstruirovanie v ehlektronnojj apparature. 2010. № 5−6. S. 22−29.
  4. Andreev B.V., Stoljarov A.A., Vasjutin M.S., Mikhalkov A.M. Aktivnyjj chuvstvitelnyjj ehlement sensora radiacionnykh izluchenijj na osnove MDP-struktur s nanorazmernymi diehlektricheskimi slojami // Vestnik MGTU im. N.EH. Baumana. Ser. Priborostroenie. 2010. S. 118−127.
  5. Andreev V.V., Bondarenko G.G., Romanov A.V., Loskutov S.A. Processy radiacionnojj ionizacii v diehlektricheskikh plenkakh MDP-struktur v silnykh ehlektricheskikh poljakh // Perspektivnye materialy. 2015. № 12. S. 25−31.
  6. Andreev V.V., Bondarenko G.G., Maslovsky V.M., Stolyarov A.A. Multilevel current stress technique for investigation thin oxide layers of MOS structures // IOP Conf. Series: Materials Science and Engineering. 2012. V. 41. P. 012017.
  7. Andreev V.V., Bondarenko G.G., Maslovsky V.M., Stolyarov A.A., Andreev D.V. Control current stress technique for the investigation of gate dielectrics of MIS devices // Phys. Status Solidi S. 2015. V. 12. № 3. P. 299−303.
  8. Andreev V.V., Stoljarov A.A., Dmitriev V.G., Romanov A.V. Inzhekcionnye metody kontrolja podzatvornogo diehlektrika MDP-IMS // Naukoemkie tekhnologii. 2012. T. 13. № 10. S. 20−28.
  9. Andreev B.V., Bondarenko G.G., Lychagin A.A., Stoljarov A.A., Uljanenko S.E. Radiacionnaja ionizacija v strukturakh metall-diehlektrik-poluprovodnik v rezhime silnopolevojj inzhekcii ehlektronov // Fizika i khimija obrabotki materialov. 2006. № 5. S. 19−23.
  10. Strong A.W., Wu E.Y., Vollertsen R., Suñé J., Rosa G.L., Rauch S.E., Sullivan T.D. Reliability wearout mechanisms in advanced CMOS technologies. Wiley-IEEE Press. 2009. 624 p.
  11. Andreev V.V., Bondarenko G.G., Maslovsky V.M., Stolyarov A.A. Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments // Acta Phys. Pol. A. 2014. V. 125. № 6. P. 1371−1373.
  12. Andreev V.V., Bondarenko G.G., Maslovsky V.M., Stolyarov A.A., Andreev D.V. Modification and Reduction of Defects in Thin Gate Dielectric of MIS Devices by Injection-Thermal and Irradiation Treatments // Phys. Status Solidi S. 2015. V. 12. № 1−2. P. 126−130.