S.I. Tolstolutsky, A.I. Lee, V.V. Kazachkov, G.P. Sinyavsky

Power limiters are used for protection input stage low noise amplifiers (LNA) from wideband interference. It is located previous LNA therefore necessary minimize insertion loss. Monolithic GaAs power limiters are most interested. The purpose of the present work is experimental research of parts-making capability wideband power limiters with low-loss. Topology diodes and matching components are computed. Two modification MMIC topology power limiters have been developed. Power limiters with low-loss on the base MMIC technique are made. The fabrication technology is described. The experimental research of power limiters is performed. The conclusion: 1. Calculation results and experimental research are validated capability fabrication GaAs power limiters with low insertion loss. Device has loss about 0.3-0.4 dB. Power limiter provide Pout=15-20 mW for Pin=2 W. 2. Structure n-n+?i provides minimal loss and maximal frequency range for power limiters. 3. n-n+?i structure power limiter versus n+? n-i device has narrow band. But it can be integrated with LNA. 4. The technique of fabrication low loss power limiter MMIC for different frequency band is developed.