F.А. Baron – Dr.Sc. (Eng.), Deputy Chief Technology Officer of Microelectronics Division,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
E-mail: filippbaron@mail.ru
S.О. Konovalov – Process Engineer,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
F.V. Zelenov – Process Engineer,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
А.N. Masyugin – Process Engineer,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
А.B. Ivanov – Process Engineer,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
А.V. Strezh – Chief Technology,
JSC «SPE «Radiosvyaz» (Krasnoyarsk)
This paper presents the design and manufacturing technology of discrete thin-film capacitors manufactured using atomic layer deposition of aluminum oxide (Al2O3) and other innovative technologies. Thin-film capacitor is a functional analogue of ceramic capacitor, but it has higher quality factor, lower temperature coefficient and frequency dispersion. Design and fabrication process of thin-film capacitors are discussed, the corresponding prototypes of the elements are demonstrated. Degradation of the thin-film dielectrics of various thicknesses was studied during long-term operation under electric and temperature stress. Comparison of fabricated thin-film capacitors with ceramic in several key parameters is presented. This new technology yields significant improvement of the temperature and frequency ranges of the Al2O3 thin film RF capacitors making them strong competitors to thick film high-k ceramics capacitors. We demonstrate truly outstanding characteristics of the capacitors manufactured.
- Masyugin A.N., Zelenov F.V., Ivanov A.B., Konovalov S.O., Tyutyunnik M.O., Baron F.A. Molodezh'. Obshchestvo. Sovremennaya nauka, tekhnika i innovatsii. 2017. № 16. S. 345–347. [in Russian]