350 rub
Journal Achievements of Modern Radioelectronics №3 for 2017 г.
Article in number:
Layered structure on the basis of films of policluster diamond and AlN for the devices on surface acoustic waves
Authors:
А.F. Belyanin - Dr.Sc. (Eng.), Professor, Chief Research Scientist, JSC CRTI «Technomash», JSC «Scientific Engineering Center «Technological Developments Of Telecommunication And Radio Frequency Identification»
E-mail: belyanin@cnititm.ru
A.S. Bagdasarian - Dr.Sc. (Eng.), Professor, Chief Research Scientist, JSC «Scientific Engineering Center «Technological Developments Of Telecommunication And Radio Frequency Identification», Kotelnikov Institute of Radio Engineering and Electronics of RAS
Abstract:
Devices on surface acoustic wave on the basis of layered structures comprising PFD and piezoelectric film AlN are presented. Policluster films of diamond (PFD) was formed from the gas phase hydrogen and methane, activated arc or microwave discharge, and heat (the method of «hot-wire») on subjects of Si and W. AlN films grown at low temperatures (370-570 K) on the PFD surface by RF magnetron reactive sputtering. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic PFD and AlN films was studied.
Pages: 30-38
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