Spurious oscillation suppression in microwave HIC of power amplifiers outрut stage

V.A. Iovdalsky; V.P. Marin; V.S. Seregin; I.A. Sokolov; V.V. Kuznetsov

Spurious oscillation suppression in microwave HIC of power amplifiers outрut stage

V.A. Iovdalsky¹, V.P. Marin², V.S. Seregin³, I.A. Sokolov⁴, V.V. Kuznetsov⁵

research article Pages: 20-22

¹ Dr. Sc. (Eng.), Head of Department, JSC «RPC «Istok» named after Shokin (Fryazino, Moscow reg.); Associate Professor, Moscow Technological University (MIREA)
² Academic APK, Dr. Sc. (Eng.), Professor, Moscow Technological University (MIREA)
³ Dr. Sc. (Eng.), General Director - General Designer, JSC «SPA «NIITAL» (Moscow)
⁴ Ph. D. (Eng.), General Director - General Designer, JSC «NII «Micropribor» named after G.J. Guskov (Moscow)
⁵ Ph. D. (Eng.), Associate Professor, Head of Department of Optics-Electronic Devices and Systems, Moscow Technological University (MIREA)

Keywords: high frequency spurious oscillation microwave HIC with two-tiered arrangement of Shottky-gate FET crystals power amplifiers power addition

Abstract

The solution of the problem of high frequency spurious oscillation suppression in microwave HIC with two-tiered arrangement of Schottky-gate FET crystals by means of decreasing the joint lengths at the expense of combining them into a group of 4 crystals has been reported. An analysis of previous research in the field of high-frequency generation suppression managed to get the HIC, in which the high-frequency generation did not occur at the frequencies 2...6 GHz, as well as to clarify the structure and critical dimensions of the developed microwave HIC for successful suppression of generation already in the process of their creation.

How to cite

Иовдальский В.А., Марин В.П., Серегин В.С., Соколов И.А., Кузнецов В.В. Подавление паразитной генерации в ГИС СВЧ выходного каскада усилителей мощности // Наукоемкие технологии. 2017. № 2. С. 20–22.

References

Gavrilov I.A., Bylkin V.I., Karpov JU.V. Nauchno-tekhnich. otchet № 9-9176 «Razrabotka linejjnykh tranzistornykh usilitelejj SVCH s vykhodnojj moshhnostju 0,7 Vt v diapazonakh chastot 1-2 i 2-4 GGc s koehfficientom usilenija ne menee 33 dB». 2001.
GaN NEMT s vykhodnojj moshhnostju 140 Vt v diapazone 5 GGc // Novosti SVCH-tekhniki. 2006. № 7. S. 5−8. (13th GaAs Symposium Digest. Paris. 2005.).
Iovdalskijj V.A. Novaja koncepcija slozhenija moshhnosti kristallov PTSH v GIS usilitelejj moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2006. № 1(487). S. 44−51.
Iovdalskijj V.A. Podavlenie parazitnojj generacii v GIS SVCH usilitelejj moshhnosti // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2010. № 4(507). S. 72−75.
GaN-usilitel s vykhodnojj moshhnostju 200 Vt v S-diapazone // Novosti SVCH-tekhniki. 2009. № 5. S. 8−10. (IEEE MTT-S Digest. 2007. P. 1251−1254.).
Iovdalskijj V.A., Lapin V.G., Pchelin V.A. Dvukhjarusnaja tranzistornaja sborka dlja usilitelejj moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2009. № 4(503). S. 38−41.
Iovlalskijj V.A., Pchelin V.A., Lapin V.G. Sostavnojj dvukhjarusnyjj tranzistor dlja usilitelejj moshhnosti SVCH-diapazona.
Pat. RF № 2541725, prioritet ot 23.07.2013. Vyvodnaja ramka dlja mnogokristalnogo poluprovodnikovogo pribora SVCH / Iovdalskijj V.A., Dudinov K.V., Morgunov V.G., Kudrova T.S.; MPK N01 L 23/48, zaregistr. v Gos. reestre izobretenijj RF 15.01.2015.

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[1] Gavrilov I.A., Bylkin V.I., Karpov JU.V. Nauchno-tekhnich. otchet № 9-9176 «Razrabotka linejjnykh tranzistornykh usilitelejj SVCH s vykhodnojj moshhnostju 0,7 Vt v diapazonakh chastot 1-2 i 2-4 GGc s koehfficientom usilenija ne menee 33 dB». 2001.

[2] GaN NEMT s vykhodnojj moshhnostju 140 Vt v diapazone 5 GGc // Novosti SVCH-tekhniki. 2006. № 7. S. 5−8. (13th GaAs Symposium Digest. Paris. 2005.).

[3] Iovdalskijj V.A. Novaja koncepcija slozhenija moshhnosti kristallov PTSH v GIS usilitelejj moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2006. № 1(487). S. 44−51.

[4] Iovdalskijj V.A. Podavlenie parazitnojj generacii v GIS SVCH usilitelejj moshhnosti // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2010. № 4(507). S. 72−75.

[5] GaN-usilitel s vykhodnojj moshhnostju 200 Vt v S-diapazone // Novosti SVCH-tekhniki. 2009. № 5. S. 8−10. (IEEE MTT-S Digest. 2007. P. 1251−1254.).

[6] Iovdalskijj V.A., Lapin V.G., Pchelin V.A. Dvukhjarusnaja tranzistornaja sborka dlja usilitelejj moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2009. № 4(503). S. 38−41.

[7] Iovlalskijj V.A., Pchelin V.A., Lapin V.G. Sostavnojj dvukhjarusnyjj tranzistor dlja usilitelejj moshhnosti SVCH-diapazona.

[8] Pat. RF № 2541725, prioritet ot 23.07.2013. Vyvodnaja ramka dlja mnogokristalnogo poluprovodnikovogo pribora SVCH / Iovdalskijj V.A., Dudinov K.V., Morgunov V.G., Kudrova T.S.; MPK N01 L 23/48, zaregistr. v Gos. reestre izobretenijj RF 15.01.2015.

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