Simulation of current distribution in the powerful HF (UHF) transistor wiring system

System of algebraic equations, containing values of magnetic self-induction flows and inductive coupling in the powerful RF transistor cells input circuits was formulated, its solution was obtained by the iteration method. It was concluded that the heterogeneity of currents distribution in the constructions of bipolar transistors in circuits of common base amplifiers in a consistent mode can increase the uniformity of transistor structures temperature highs and an increase the marginal power parameters of transistors.