Diffusion Simulation in Ion-Doped Materials

A new phenomenological model for diffusion in ion-doped materials is presented. The model allows to take into account interaction fluxes of admixture diffused both by the bulk and dislocation mechanisms. The conditions are considered when an inhomogeneous dual boundary problem can be reduced to a homogeneous diffusion equation. An analytical solution of the third boundary problem of dual-flux diffusion is obtained for the case of a constant diffusion coefficient.