Circuit design solution and algorithm of digital control of processes for a universal bidirectional transistor module of switching mode voltage converter

V.A. Filin; A.N. Golovin; V.S. Smirnov; V.A. Yurova

doi:10.18127/j00338486-202406-13

Circuit design solution and algorithm of digital control of processes for a universal bidirectional transistor module of switching mode voltage converter

V.A. Filin¹, A.N. Golovin², V.S. Smirnov³, V.A. Yurova⁴

research article UDC 621.375.026, 621.382 Pages: 100-109 doi.org/10.18127/j00338486-202406-13

^1,2,3 The Bonch-Bruevich St. Petersburg State University of Telecommunications (St. Petersburg, Russia)
⁴ The Bonch-Bruevich St. Petersburg State University of Telecommunications (St. Petersburg, Russia); North-West State Medical University named after I.I. Mechnikov (St. Petersburg, Russia)

Keywords: SiC transistors digital PWM bidirectional power transmission UBPM modes: DC-DC DC-AC AC-DC parallel operation of modules

Abstract

The problem of design a universal intelligent switching mode device based on SiC transistors with built-in digital control, capable of performing various types of electrical power conversion, is formulated. The results of a study of a computer model of this device are presented, confirming the correctness of the proposed solutions. Methods for implementing parallel operation of modules are considered.

Received: 05.02.2024
Approved after review: 19.02.2024
Accepted: 29.04.2024

How to cite

Филин В.А., Головин А.Н., Смирнов В.С., Юрова В.А. Схемотехническое решение и алгоритм цифрового управления процессами для универсального двунаправленного транзисторного модуля ключевого преобразователя напряжения // Радиотехника. 2024. Т. 88. № 6. С. 100−109. DOI: https://doi.org/10.18127/j00338486-202406-13

References

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Kozak J.P., Zhang R., Yang H., Ngo K.D.T., Zhang Y. Robustness evaluation and degradation mechanisms of SiC MOSFETs overstressed by switched stimuli. Proc. IEEE Appl. Power Electron. Conf. Expo. 2020. Р. 1135-1140. DOI:10.1109/TPEL.2021.3122740.
Mookken D., Kartashev E., Valerija S. Preimushhestva zameny IGBT na SiC-moduli. Silovaja jelektronika. 2016. № 5. S. 20–23 (in Russian).
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Smirnov V.S. Equivalent frequency characteristics of transistor key devices with negative feedback (mathematical modeling, measurement and optimization techniques): dissertation of a candidate of technical sciences: 05.12.04.- Saint-Petersburg. 2007, 266 p.
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Holmes D.G., Lipo T.A. Pulse Width Modulation for Power Converters. Principles and Practice. IEEE Press. Wiley-Interscience. New York, USA. 2003. Р. 226–230.
Artym A.D., Espolov K.Zh., Filin V.A. Matrichnye modeli radiotehnicheskih cepej. Pod red. d.t.n., prof. V.A. Filina. SPb: Jelmor. 2015. 280 s. (in Russian)
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Filin V.A., Yurova V.A. Symbolic analysis of linear amplifiers with multi-loop feedbacks in interacting programs maple and FASTMEAN. Proceedings of the Maple Conference 2021. 2022. V. 2. № 1. Article 14418. https://doi.org/10.5206/mt.v2i1.14418.
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[1] Wei J., et al. Review on the Reliability Mechanisms of SiC Power MOSFETs: A comparison between planar-gate and trench-gate structures. IEEE Transactions on Power Electronics. 2023. V. 38. № 7. Р. 8990-9005. DOI: 10.1109/TPEL.2023.3265864.

[2] Kozak J.P., Zhang R., Yang H., Ngo K.D.T., Zhang Y. Robustness evaluation and degradation mechanisms of SiC MOSFETs overstressed by switched stimuli. Proc. IEEE Appl. Power Electron. Conf. Expo. 2020. Р. 1135-1140. DOI:10.1109/TPEL.2021.3122740.

[3] Mookken D., Kartashev E., Valerija S. Preimushhestva zameny IGBT na SiC-moduli. Silovaja jelektronika. 2016. № 5. S. 20–23 (in Russian).

[4] Stranica osnovnyh harakteristik trehfaznogo invertora CRD25DA12N-FMC na sajte firmy-proizvoditelja Wolfspeed: sajt. SShA. 2024. URL: https://www.wolfspeed.com/crd25da12n-fmc/ (data obrashhenija: 05.02.2024) (in Russian).

[5] Stranica osnovnyh harakteristik povyshajushhego preobrazovatelja s cheredovaniem 60 kVt na sajte firmy-proizvoditelja Wolfspeed: sajt. SShA. 2024. URL: https://www.wolfspeed.com/crd-60dd12n/ (data obrashhenija: 05.02.2024) (in Russian).

[6] Smirnov V.S. Equivalent frequency characteristics of transistor key devices with negative feedback (mathematical modeling, measurement and optimization techniques): dissertation of a candidate of technical sciences: 05.12.04.- Saint-Petersburg. 2007, 266 p.

[7] Dmitrikov V.F., Shushpanov D.V. Ustojchivost' i jelektromagnitnaja sovmestimost' ustrojstv i sistem jelektropitanija. M.: Gorjachaja linija - Telekom. 2018. 540 s. (in Russian).

[8] Holmes D.G., Lipo T.A. Pulse Width Modulation for Power Converters. Principles and Practice. IEEE Press. Wiley-Interscience. New York, USA. 2003. Р. 226–230.

[9] Artym A.D., Espolov K.Zh., Filin V.A. Matrichnye modeli radiotehnicheskih cepej. Pod red. d.t.n., prof. V.A. Filina. SPb: Jelmor. 2015. 280 s. (in Russian)

[10] Dmitrikov V.F., Shushpanov D.V. K voprosu ispol'zovanija emkostno-svjazannyh jelementov dlja ob#jasnenija vzaimnogo vlijanija jelektricheskih provodov. Radiotehnika. 2024. T. 88. № 1. S. 15-30. DOI: https://doi.org/10.18127/j00338486-202401-03

[11] Oficial'nyj sajt programmy komp'juternogo modelirovanija jelektricheskih cepej FASTMEAN: sajt. Rossija. 2024. URL: http://www.fastmean.ru/rus/index.php (data obrashhenija: 05.02.2024).

[12] Filin V.A., Yurova V.A. Symbolic analysis of linear amplifiers with multi-loop feedbacks in interacting programs maple and FASTMEAN. Proceedings of the Maple Conference 2021. 2022. V. 2. № 1. Article 14418. https://doi.org/10.5206/mt.v2i1.14418.

[13] De Brabandere K., Bolsens B., Van den Keybus J., Woyte A., Driesen J., Belmans R. A voltage and frequency droop control method for parallel inverters. IEEE Transactions on Power Electronics. 2007. V. 22. № 4. Р. 1107-1115. DOI:10.1109/PESC.2004.1355222.

[14] Yang L., et al. Improved control for transient angle stability between synchronous generators and voltage-frequency controlled converters. 2023. International Conference on Power System Technology (PowerCon). DOI: 10.1109/PowerCon58120.2023.10331358.