Automated measuring system for investigating temperature dependence of low-frequency noise spectra in electronic elements and structures

A.V. Ermachikhin; V.G. Litvinov; E.P. Trusov; S.A. Kostryukov

doi:10.18127/j00338486-202011(21)-07

Automated measuring system for investigating temperature dependence of low-frequency noise spectra in electronic elements and structures

A.V. Ermachikhin¹, V.G. Litvinov², E.P. Trusov³, S.A. Kostryukov⁴

research article UDC 53.084.6, 53.084.872-876 Pages: 55-64 doi.org/10.18127/j00338486-202011(21)-07

¹ Ph.D. (Phys.-Math.), Associate Professor of Department of Micro- and Nanoelectronics
² Dr.Sc. (Phys.-Math.), Associate Professor, Leading Research Scientist, Head of Department of Micro- and Nanoelectronics
³ Post-graduate Student аспирант of Department of Micro- and Nanoelectronics
⁴ Ph.D. (Phys.-Math.), Engineer of Department of Micro- and Nanoelectronics

Keywords: Measuring complex low-frequency noise spectroscopy power spectral density

Abstract

Formulation of the problem. The use of noise as a source of information on the semiconductor barrier structures and devices is a promising direction in the diagnostics of semiconductor devices. It is necessary to measure noise spectra over a wide temperature range to obtain reliable results.

Goal. Development of a measuring and analytical complex for the study of the low-frequency noise spectrum temperature dependence.

Results. In this paper a measuring analytical complex for low-frequency noise spectroscopy is presented. The measuring complex is adapted for the automated study of low-frequency noise in electronic elements and structures in the frequency range 0.00110000 Hz with the constant bias voltage till 50 V and in the temperature range 7-500 К.

Practical significance. The results of testing the operation of the measuring complex are given as an example of the semiconductor barrier structure study.

Received: 11.09.2020

How to cite

Ермачихин А.В., Литвинов В.Г., Трусов Е.П., Кострюков С.А. Измерительный комплекс для исследований температурной зависимости спектра низкочастотного шума в элементах и структурах электронной техники // Радиотехника. 2020. № 11. С. 55–64. DOI: https://doi.org/10.18127/j00338486-202011(21)-07

References

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Ermachihin A.V., Kostrjukov S.A., Litvinov V.G., Rybin N.B. Issledovanie shumovyh svojstv i jelektronnyh sostojanij dioda Shottki na osnove geterostruktury InGaAs/GaAs s kvantovoj jamoj. Vestnik Rjazanskogo gosudarstvennogo radio-tehnicheskogo universiteta. 2012. № 3 41. 2012. S. 98-103.
Kumar A., Heilmann M., Latzel M., Kapoor R., Sharma I., Göbelt M., Christiansen S.H., Kumar V., Singh R. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. Scientific Reports. 2016. P. 27553.
Song Y., Jeong H., Chung S., Ahn G. H., Kim T.-Y., Jang J., Yoo D., Jeong H., Javey A., Lee T. Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. Scientific Reports. 2016. P. 33967.
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Essick J. Hands-On Introduction to LabVIEW for Scientists and Engineers. Oxford University Press. 2012.
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Zhao M., Huang J.X., Wong M.H., Tang Y.M., Ong C.W. Rev. Versatile computer-controlled system for characterization of gas sensing materials. Scient. Instrum. 2011. V. 82. Iss. 10. P. 105001.
Das A.D., Mahapatra K.K. Real-Time Implementation of Fast Fourier Transform (FFT) and Finding the Power Spectrum Using LabVIEW and CompactRIO. International Conference on Communication Systems and Network Technologies. 2013. P. 169-173.
Litvinov V.G., Ermachikhin A.V., Kusakin D.S., Vishnyakov N.V., Maslov A.D., Semenov A.R. Measurement complex to investigate electrophysical and noise characteristics of semiconductor micro- and nanostructures. International Conference on Noise and Fluctuations (ICNF). 2017. P. 1-4.
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Ciura Ł., Kolek A., Gawron W., Kowalewski A., Stanaszek D. Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System. Metrol. Meas. Syst. 2014. V. 21. № 3. P. 461-472.
Balandin A. Low-frequency 1/f noise in graphene devices. Nature Nanotechnology. V. 8. Iss. 8. 2013. P. 549-555 (In Russian).
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S. 623-648 (In Russian).
Scholz F., Hwang J.M., Schroder D.K. Low frequency noise and DLTS as semiconductor device characterization tools. Solid-State Electron. 1988. V. 31. № 2. P. 205-218.
Yau L.D., Sah C.T. Theory and experiments of low-frequency generation-recombination noise in MOS-transistors. IEEE Trans. Electron. Devices. 1969. V. ED-16. № 2. P.170-177.
Holomina T.A. Osobennosti processov generacii NCh-shuma v poluprovodnikovyh bar'ernyh strukturah. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2012. № 39-2. S. 117-121 (In Russian).
Holomina T.A., Kostrjukov S.A., Laktjushkin A.S. Issledovanie poluprovodnikovyh bar'ernyh struktur metodom spektroskopii nizkochastotnogo shuma. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2012. № 39-1. S. 74-78 (In Russian).
Zhigal’skii G.P., Kholomina T.A. J. Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation. Commun. Technol. Electron. V. 60. № 6. P. 517-542.
Ermachihin A.V., Litvinov V.G. Avtomatizirovannyj izmeritel'nyj kompleks tokovoj relaksacionnoj spektroskopii glubokih urovnej. Pribory i tehnika jeksperimenta. 2018. № 2. S. 118-123 (In Russian).
Litvinov V.G., Ermachihin A.V., Kusakin D.S. DLTS issledovanie dioda Shottki na osnove geterostruktury InGaAs/GaAs s kvantovoj jamoj. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2013. № 44. S. 91-96 (In Russian).
Zi S. Fizika poluprovodnikovyh priborov. Kn. 1. M.: Mir. 1984 (In Russian).

[1] Zhigal'skij G.P. Fluktuacii i shumy v jelektronnyh tverdotel'nyh priborah. M.: Fizmatlit. 2012. 512 s. (In Russian).

[2] Razumenko D.V. Nizkochastotnye shumy jelektronnyh komponentov kak instrument dlja diagnostiki vnutrennih defektov. Komponenty i tehnologii. 2008. № 9. S. 168-174. (In Russian).

[3] Bukingem M. Shumy v jelektronnyh priborah i sistemah: Per. c angl. M.N. Devjatkov. M. 1986. 399 s. (In Russian).

[4] Kogan Sh.M. Nizkochastotnyj tokovyj shum so spektrom 1/f v tverdyh telah. Uspehi fizicheskih nauk. 1985. T. 145. № 2. S. 285-328. (In Russian).

[5] Schottky W. Über spontane stromschwankungen in verschiedenen elektrizitatsleitern. Ann. der Phys. 1918. V. 57. P. 541-567.

[6] Ermachihin A.V., Kostrjukov S.A., Litvinov V.G., Rybin N.B. Issledovanie shumovyh svojstv i jelektronnyh sostojanij dioda Shottki na osnove geterostruktury InGaAs/GaAs s kvantovoj jamoj. Vestnik Rjazanskogo gosudarstvennogo radio-tehnicheskogo universiteta. 2012. № 3 41. 2012. S. 98-103.

[7] Kumar A., Heilmann M., Latzel M., Kapoor R., Sharma I., Göbelt M., Christiansen S.H., Kumar V., Singh R. Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes. Scientific Reports. 2016. P. 27553.

[8] Song Y., Jeong H., Chung S., Ahn G. H., Kim T.-Y., Jang J., Yoo D., Jeong H., Javey A., Lee T. Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices. Scientific Reports. 2016. P. 33967.

[9] Luan X., Huang Y., Li Y., McMillan J. F., Zheng J., Huang S.-W., Hsieh P.-C., Gu T., Wang Di, Hati A., Howe D. A, Wen G., Yu M., Lo G., Kwong D.-L., Wong C.W. An integrated low phase noise radiation-pressure-driven optomechanical oscillator chipset. Scientific Reports. 2014. V. 4. P. 6842. DOI: 10.1038/srep06842.

[10] Essick J. Hands-On Introduction to LabVIEW for Scientists and Engineers. Oxford University Press. 2012.

[11] Ermachihin A.V., Litvinov V.G. LabVIEW v sovremennoj industrii izmerenij (obzor). Informacionnye tehnologii. 2014. № 3. S. 25-29 (In Russian).

[12] Zhao M., Huang J.X., Wong M.H., Tang Y.M., Ong C.W. Rev. Versatile computer-controlled system for characterization of gas sensing materials. Scient. Instrum. 2011. V. 82. Iss. 10. P. 105001.

[13] Das A.D., Mahapatra K.K. Real-Time Implementation of Fast Fourier Transform (FFT) and Finding the Power Spectrum Using LabVIEW and CompactRIO. International Conference on Communication Systems and Network Technologies. 2013. P. 169-173.

[14] Litvinov V.G., Ermachikhin A.V., Kusakin D.S., Vishnyakov N.V., Maslov A.D., Semenov A.R. Measurement complex to investigate electrophysical and noise characteristics of semiconductor micro- and nanostructures. International Conference on Noise and Fluctuations (ICNF). 2017. P. 1-4.

[15] Ugrjumov R.B., Shaposhnik A.V., Voishhev V.S. Metodika izmerenija nizkochastotnyh tokovyh shumov v poluprovodnikovyh sensorah gazov. PTJe. 2004. № 3. S. 85-91 (In Russian).

[16] Ciura Ł., Kolek A., Gawron W., Kowalewski A., Stanaszek D. Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System. Metrol. Meas. Syst. 2014. V. 21. № 3. P. 461-472.

[17] Balandin A. Low-frequency 1/f noise in graphene devices. Nature Nanotechnology. V. 8. Iss. 8. 2013. P. 549-555 (In Russian).

[18] Zhigal'skij G.P. Shum vida 1/f i nelinejnye jeffekty v tonkih metallicheskih plenkah. Uspehi fizicheskih nauk. 1997. T. 167. № 6.
S. 623-648 (In Russian).

[19] Scholz F., Hwang J.M., Schroder D.K. Low frequency noise and DLTS as semiconductor device characterization tools. Solid-State Electron. 1988. V. 31. № 2. P. 205-218.

[20] Yau L.D., Sah C.T. Theory and experiments of low-frequency generation-recombination noise in MOS-transistors. IEEE Trans. Electron. Devices. 1969. V. ED-16. № 2. P.170-177.

[21] Holomina T.A. Osobennosti processov generacii NCh-shuma v poluprovodnikovyh bar'ernyh strukturah. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2012. № 39-2. S. 117-121 (In Russian).

[22] Holomina T.A., Kostrjukov S.A., Laktjushkin A.S. Issledovanie poluprovodnikovyh bar'ernyh struktur metodom spektroskopii nizkochastotnogo shuma. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2012. № 39-1. S. 74-78 (In Russian).

[23] Zhigal’skii G.P., Kholomina T.A. J. Excess noise and deep levels in GaAs detectors of nuclear particles and ionizing radiation. Commun. Technol. Electron. V. 60. № 6. P. 517-542.

[24] Ermachihin A.V., Litvinov V.G. Avtomatizirovannyj izmeritel'nyj kompleks tokovoj relaksacionnoj spektroskopii glubokih urovnej. Pribory i tehnika jeksperimenta. 2018. № 2. S. 118-123 (In Russian).

[25] Litvinov V.G., Ermachihin A.V., Kusakin D.S. DLTS issledovanie dioda Shottki na osnove geterostruktury InGaAs/GaAs s kvantovoj jamoj. Vestnik Rjazanskogo gosudarstvennogo radiotehnicheskogo universiteta. 2013. № 44. S. 91-96 (In Russian).

[26] Zi S. Fizika poluprovodnikovyh priborov. Kn. 1. M.: Mir. 1984 (In Russian).

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