Modern complex devices in terahertz frequency range
- 1 Post-graduate Student, Department «Electronic Instruments and Devices», Yuri Gagarin State Technical University of Saratov
- 2 Dr.Sc.(Eng.), Professor, Department «Electronic Instruments and Devices», Yuri Gagarin State Technical University of Saratov
- 3 Engineer, JSC «SPE «Almaz» (Saratov)
Abstract
This paper presents a development and manufacturing of the dual-gate field-effect transistor (FET) 3П612-А1-5 in a form of six-pole in low-level signal operation. Also was solved the problem of 4-pole transformation into multipole. This article also gives a topology of 5-channel power combiner/power divider, in frequency band 4−12, 6−18 GHz, designed according to the travelling wave drawing. Two amplifiers-correctors with operating frequency range 4−12 and 6−18 GHz, aimed for the work together with TWT were covered in the article. The block diagrams, external view, overall dimensions, amplitude and phase-frequency characteristics were mentioned. And also solved the problem of output power leveling of the line solid-state amplifier in common with TWT, in the frequency range to the prescribed level.
How to cite
Титков А.А., Олейник А.С., Степанов М.С. Современные комплексированные устройства терагерцевого диапазона // Радиотехника. 2018. № 8. С. 173–181. DOI: https://doi.org/10.18127/j00338486-201808-33
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