Simulation of the broadband thermostabilized amplifier in the range of the frequencies of 1…2 GHz
- 1 Undergraduate, Saratov State University named after N.G. Chernyshevsky
- 2 Dr. Sc. (Eng.), Saratov State University named after N.G. Chernyshevsky
Abstract
The influence of temperature on gain coefficient and standing wave ratio of the 2 W amplifier based on 2T937 transistor in the range 1−2 GHz are presented. When using emitter stabilizing of amplifying stage the transmission ratio of the amplifier changes within 0.5 dB in the range of temperatures from −40°C to 70°C.
How to cite
Чесаков В.С., Сотов Л.С. Моделирование широкополосного термостабилизированного усилительного модуля в диапазоне частот 1…2 ГГц // Радиотехника. 2017. № 7. С. 122–124.
References
- Apin M.P., Balabolin A.G., Xvalin A.L., Sotov L.S. Proektirovanie moshhny'x shirokopolosny'x usilitelej na otechestvennoj e'lementnoj baze v diapazone 1…2 GGcz // Radiotexnika. 2016. № 7. S. 4−9.
- Apin M.P., Sotov L.S., Xvalin A.L. Osobennosti proektirovaniya shirokopolosny'x usilitel'ny'x modulej diapazona 2…4 GGcz s vy'xodnoj moshhnost'yu 50 Vt // Radiotexnika. 2015. № 10. S. 87−92.
- Xvalin A.L., Sotov L.S. Proektirovanie moshhny'x usilitel'ny'x modulej diapazona 2…4 GGCz // Voprosy' e'lektromexaniki. Trudy' VNIIE'M. 2016. T. 151. № 2. S. 42−48.
- Antognetti P., Massobrio G. Semiconductor Device Modeling with SPICE. New York: McGraw-Hill. 1988.
- Xvalin A.L., Straxova L.L., Vorob'ev A.V. Optimizacziya parametrov modeli bipolyarnogo tranzistora po ego e'ksperimental'ny'm xarakteristikam // Radiotexnika. 2015. № 7. S. 35−40.
- Meshhanov V.P., Xvalin A.L. Metodika utochneniya xarakteristik modeli Materka polevogo tranzistora // Radiotexnika. 2010. № 5. S. 111−115.
- Bazlov N.N., Kacz B.M., Meshhanov V.P., Shikova L.V. Sintez malogabaritny' SVCh transformatorov na osnove e'lementov s raspredelenny'mi i sosredotochenny'mi parametrami // Radiotexnika. 2009. № 12. S. 19−25.
