Development of planar slow-wave structures on dielectric substrates for millimeter- and submillimeter wave vacuum microelectronic devices
- 1 Post-graduate Student, Engineer, Saratov State University named after N.G. Chernyshevsky
- 2 Senior Research Scientist, Saratov State University named after N.G. Chernyshevsky
- 3 Dr. Sc. (Phys.-Math.), Professor, Head of Department, Saratov State University named after N.G. Chernyshevsky, Senior Research Scientist, Saratov branch of Kotel\'nikov IRE of RAS
- 4 Dr. Sc. (Phys.-Math.), Deputy Director, Saratov branch of Kotel\'nikov IRE of RAS
- 5 Ph. D. (Phys.-Math.), Head of Laboratory, Saratov branch of Kotel\'nikov IRE of RAS
- 6 Ph. D. (Eng.), Head of Department, JSC «SPE «Almaz» (Saratov)
Abstract
In this paper, the results of research of planar slow-wave structure (SWS) on dielectric substrates for miniaturized amplifiers and os-cillators of O type at millimeter and sub-millimeter band are discussed. Planar SWS like a metallized meander microstrip line and in-terdigital SWS were considered. The meander SWS is supposed to be used in a traveling wave tube where effective wave-beam inte-raction with fundamental forward space harmonic takes place, while the interdigital SWS is assumed to be used in a backward-wave oscillator where backward space harmonic is a working mode.
In Section 1, the results of electromagnetic modeling of planar SWS using the 3D ANSYS HFSS software package are presented. De-pendences of basic electrodynamic characteristics such as dispersion and coupling impedance on geometry of the SWS have been studied. Simulation and parameter optimization of the planar SWS in G and V band taking into account fabrication tolerance were carried out.
Section 2 is devoted to fabrication issues of the planar SWS on dielectric substrates using modern photolithography technology. The technology of copper films deposition on a dielectric substrate with a chrome underlayer has been developed. Using the results of electromagnetic modeling, SWS at 180−230 GHz and 50−60 GHz frequency bands were designed and metallization masks were de-veloped. Samples of the meander and interdigital SWS circuits on silica and sapphire substrate were fabricated.
How to cite
Бенедик А.И., Рожнев А.Г., Рыскин Н.М., Синицын Н.И., Торгашов Г.В., Шалаев П.Д. Разработка планарных замедляющих систем на диэлектрических подложках для приборов вакуумной микроэлектроники миллиметрового и субмиллиметрового диапазонов // Радиотехника. 2016. № 7. С. 47–52.
References
- Rozhnev A.G., Ryskin N.M., Sokolov D.V., Trubetskov D.I., Han S.T., Kim J.I., Park G.S. Novel concepts of vacuum microelectronic microwave devices with field emitter cathode arrays // Physics of Plasmas. 2002. V. 9. № 9. P. 4020−4027.
- Srivastava V. THz vacuum microelectronic devices // J. Physics: Conf. Series. 2008. V. 114. № 1. P. 012015.
- Booske J.H., Dobbs R.J., Joye C.D., Kory C.L., Neil G.R., Park G.S., Park J.H., Temkin R.J. Vacuum electronic high power terahertz sources // IEEE Trans. Terahertz Sci. Technol. 2011. V. 1. № 1. P. 54−75.
- Rozhnjov A.G., Ryskin N.M., Karetnikova T.A., Torgashov G.V., Sinicyn N.I., SHalaev P.D., Burcev A.A. Issledovanie kharakteristik zamedljajushhejj sistemy lampy begushhejj volny millimetrovogo diapazona s lentochnym ehlektronnym puchkom // Izvestija VUZov. Radiofizika. 2013. T. 56. № 8−9. S. 601−613.
- Karetnikova T.A., Rozhnev A.G., Ryskin N.M., Torgashov G.V., Torgashov I.G., Sinicyn N.I. Voprosy razrabotki usilitelejj i generatorov O‑tipa subteragercevogo diapazona chastot // Radiotekhnika. 2014. № 10. S. 46−51.
- Karetnikova T.A., Rozhnjov A.G., Ryskin N.M., Torgashov G.V., Sinicyn N.I., Grigorev JU.A., Burcev A.A., SHalaev P.D. Modelirovanie lampy begushhejj volny subteragercevogo diapazona s zamedljajushhejj sistemojj tipa sdvoennojj grebenki i lentochnym ehlektronnym puchkom // Radiotekhnika i ehlektronika. 2016. T. 61. № 1. S. 54−60.
- Guljaev JU.V., Zakharchenko JU.F., ZHbanov A.I., Nefedov I.S., Sinicyn N.I., Torgashov G.V. Planarnye zamedljajushhie sistemy miniatjurnykh ehlektrovakuumnykh SVCH priborov // Radiotekhnika i ehlektronika. 1994. T. 39. № 12. S. 2049−2058.
- Sengele S., Jiang H., Booske J.H., Kory C.L., van der Weide D.W., Ives R.L. Microfabrication and characterization of a selectively metallized W‑Band meander-line TWT circuit // IEEE Trans. Electron Devices. 2009. V. 56. № 5. P. 730−737.
- Shen F., Wei Y.-Y., Xu X., Liu Y., Yin H.-R., Gong Y.-B., Wang W.-X. 140-GHz V‑shaped microstrip meander-line traveling wave tube // J. Electromagnetic Waves and Applications. 2012. V. 26. № 1. P. 89−98.
- Sumathy M, Augustin D, Datta S.K., Christie L., Kumar L. Design and RF characterization of W‑band meander-line and folded-waveguide slow-wave structures for TWTs // IEEE Trans. Electron Devices. 2013. V. 60. № 5. P. 1769−1775.
- Nguyen L.B., Antonsen T.M., Nusinovich G.S. Planar slow-wave structure with parasitic mode control // IEEE Trans. Electron Devices. 2014. V. 61. № 6. P. 1655−1660.
- Bai N., Shen M., Sun X. Investigation of microstrip meander-line traveling-wave tube using EBG Ground Plane // IEEE Trans. Electron Devices. 2015. V. 62. № 5. P. 1622−1627.
- High Frequency Structure Simulator (HFSS) of ANSYS. URL = http://www.ansoft.com/products/hf/hfss/
