Stability margin increase of transistor oscillator steady state regime method
- 1 Ph. D. (Eng.), Senior Research Scientist, Moscow
Abstract
This paper focuses on the efficient transistor oscillator steady-state regime stability margin increase method proposed by author. This method is based on the use of correction in oscillator self-bias circuit.
The oscillator CAD model is based on the system of Evtyanov-s symbolic shortened differential equations. Specific feature of this model is accounting of intrinsic thermal feedback impact, which occurs owing to transistor electrophysical parameters temperature dependence.
The oscillator steady-state regime stability analysis is based on the Routh-Hurwitz algebraic criterion.
The suppression feature of oscillation self-modulation caused by excessive self-bias circuit inertance impact is experimentally proved by the proposed correction modification.
How to cite
Кононов А.В. Метод повышения запаса устойчивости стационарного режима транзисторного автогенератора // Радиотехника. 2015. № 7. С. 124–130.
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