Josephson tunnel junctions with integral SIN shunting
- 1 Kotelnikov IRE of RAS (Moscow, Russia); Moscow Institute of Physics and Technology (Dolgoprudny, Russia)
- 2 Kotelnikov IRE of RAS (Moscow, Russia)
- 3 Kotelnikov IRE of RAS (Moscow, Russia); Institute for Physics of Microstructures of RAS (Moscow, Russia)
Abstract
This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured.
- Received
- 05.05.2022
- Approved after review
- 11.05.2022
- Accepted
- 25.07.2022
How to cite
Шевченко М.С., Филиппенко Л.В., Кошелец В.П. Джозефсоновские туннельные переходы с интегральным СИН шунтированием // Нелинейный мир. 2022. Т. 20. №3. С. 66-71. DOI: https://doi.org/10.18127/j20700970-202203-08
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