Excitation of propagating plasmon in periodical graphene structure with incident wave full absorption

K.V. Mashinsky; V.V. Popov; D.V. Fateev

doi:10.18127/j20700970-202001-07

Excitation of propagating plasmon in periodical graphene structure with incident wave full absorption

K.V. Mashinsky¹, V.V. Popov², D.V. Fateev³

research article UDC 621.315.592 Pages: 30-32 doi.org/10.18127/j20700970-202001-07

¹ Junior Research Scientist, Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics of RAS
² Dr.Sc. (Phys.-Math.), Head of Laboratory, Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics of RAS
³ Ph.D. (Phys.-Math.), Senior Research Scientist, Saratov Branch of Kotelnikov Institute of Radio Engineering and Electronics of RAS; Saratov State University

Keywords: Graphene terahertz radiation plasmon propagating wave

Abstract

Problem formulating. The methods used for excitation of propagating plasmons in graphene due to incident terahertz wave have low effectivity of electromagnetic wave power to plasmon wave power transformation.

Goal. Theoretical study of excitation of propagating plasmon wave excitation in graphene structure due to incident electromagnetic THz wave.

Result. High-efficient transformation of incident THz wave into propagating plasmonic wave may be achieved in spatially periodical graphene structure with dual grating gate and asymmetric unit cell. Absorption of terahertz wave can reach about 100% and transformation coefficient of the power of the incident THz wave into the power of a propagating plasmon can reach about 72%.

Practical meaning. Results can be used to create sources of propagating plasmons in graphene.

How to cite

Машинский К.В., Попов В.В., Фатеев Д.В. Возбуждение бегущей плазменной волны в периодической графеновой структуре при условии полного поглощения падающей волны // Нелинейный мир. 2020. № 1. С. 30–32. DOI: https://doi.org/10.18127/j20700970-202001-07

References

Geim A.K., Grigorieva I.V. Nature. 2013. V. 499. P 419−425.
Polischuk O.V., Fateev D.V., Otsuji T., Popov V.V. Appl. Phys. Lett. 2017. V. 111. V. 081110.
Fateev D.V., Mashinskiy K.V., Popov V.V. Appl. Phys. Lett. 2017. V. 110. P. 061106.
Polischuk O.V., Melnikova V.S., Popov V.V. Appl. Phys. Lett. 2016. V. 109. P. 131101.
Svintsov D., Vyurkov V., Yurchenko S., Otsuji T., Ryzhii V. J. Appl. Phys. 2012 . V. 111. P. 083715.
Popov V.V., Fateev D.V., Ivchenko E.L., Ganichev S.D. Phys. Rev. B. 2015. V. 91. P. 235436.
Alaee R., Farhat M., Rockstuhl C., Lederer F. Opt. Express. 2012. V. 20(27). P. 28017.
Fateev D.V., Popov V.V., Shur M.S. Semiconductors. 2010. V. 44(11). P. 1406-13.

[1] Geim A.K., Grigorieva I.V. Nature. 2013. V. 499. P 419−425.

[2] Polischuk O.V., Fateev D.V., Otsuji T., Popov V.V. Appl. Phys. Lett. 2017. V. 111. V. 081110.

[3] Fateev D.V., Mashinskiy K.V., Popov V.V. Appl. Phys. Lett. 2017. V. 110. P. 061106.

[4] Polischuk O.V., Melnikova V.S., Popov V.V. Appl. Phys. Lett. 2016. V. 109. P. 131101.

[5] Svintsov D., Vyurkov V., Yurchenko S., Otsuji T., Ryzhii V. J. Appl. Phys. 2012 . V. 111. P. 083715.

[6] Popov V.V., Fateev D.V., Ivchenko E.L., Ganichev S.D. Phys. Rev. B. 2015. V. 91. P. 235436.

[7] Alaee R., Farhat M., Rockstuhl C., Lederer F. Opt. Express. 2012. V. 20(27). P. 28017.

[8] Fateev D.V., Popov V.V., Shur M.S. Semiconductors. 2010. V. 44(11). P. 1406-13.

Abstract

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