Low-temperature conductivity of Si(111)-(7x7) surface

A.A. Mayzlakh

Low-temperature conductivity of Si(111)-(7x7) surface

A.A. Mayzlakh¹

research article Pages: 23-25

¹ Student, Moscow Institute of Physics and Technology, Engineer, Kotelnikov IRE RAS. S.V. Zaitsev-Zotov - Dr.Sc. (Phys.-Math.), Head of Laboratory, Kotelnikov IRE RAS

Keywords: Si(111)-(7x7)NIS transition hopping transport electronic correlation Efros-Shklovskii law Coulomb gap

Abstract

Conductivity of Si(111)-(7x7) surface reconstruction was studied in temperature range 10-320 K. Measurements were provided with the two-probe method. Our results demonstrate that conductivity dependence is represented with Efros-Shklovskii law with EES = 0,55 eV.

How to cite

Майзлах А.А. Низкотемпературная проводимость поверхности Si(111)-(7x7) // Нелинейный мир. 2015. № 2. С. 23–25.

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[1] Oura K., Lifshic V.G.,Saranin A.A., Zotov A.V, Katajama M. Vvedenie v fiziku poverkhnosti. M.: Nauka. 2005.

[2] Tanikawa T.,Yoo K., Matsuda I., Hasegawa S.,Hasegawa Y. // Phys. Rev. B 68. 2003. 113303.

[3] Modesti S., Gutzmann H., Wiebe J., Wiesendanger R. // Phys. Rev. B 80. 2009. 125326.

[4] Odobescu A.B. and Zaitsev-Zotov S.V. // J. Phys.: Condens. Matter. 2012. V. 24. 395003.

[5] Odobescu A.B. and Zaitsev-Zotov S.V. Book of abstracts of the 3 International School on Surface Science «Technologies and Measurements on Atomic Scale» (Khosta (Sochi). 2013. R.6.URL: http://sss-tmas.org/index.php/component/docman/doc_download/21-proceedings-of-sss-tmas-2013-Itemid=