Investigation of a Band Diagram and its Modification with Current Passing in Selectively Doped Heterostructures
Abstract
The simultaneous measurements of the photoreflectance spectra and I-V characteristics in GaAs/AlGaAs selective-doped heterostructures allowed to determine the built-in electric fields and a spatial dependence of the current density in direction transverse to heterostructure layers with nanometer spatial resolution. The variations of a spatial distribution of the current density with the lateral current were also investigated.
How to cite
Лонская Е.И. Исследование зонной диаграммы и ее изменения при протекании электрического тока в селективно-легированных гетероструктурах // Нелинейный мир. 2007. № 5.