Generator of high-voltage nanosecond pulses avalanche transistors
- 1,3,4 Ph. D. (Eng), MIREA
- 2,5,6 Post-graduate Student, MIREA
Abstract
The results of the test generator, built on one and four avalanche transistors. Analysis of the results of experiments to produce nanosecond pulses avalanche transistor FMMT417 scheme in one of the transistor, as well as on four transistors has certain optimum voltage at which the output pulse is obtained as short, but when you connect with the scheme of Marx steepness of transition process has a maximum at its center.
How to cite
Карпов М.А., Никишин Д.В., Шпак А.В., Егорова Е.В., Петренко Е.О., Халимов С.С. Генератор высоковольтных наносекундных импульсов на лавинных транзисторах // Нанотехнологии: разработка, применение - XXI век. 2013. № 4. С. 18–21.
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