Нysteretic magnetoresistance in stress controlled magnetic memory device
- 1,4,5,6 IEMN, UMR CNRS 8520, PRES Lille Nord de France, ECLille, 59651 Villeneuve d-Ascq, France
- 2 Wave Research Center, GPI RAS, 38 Vavilov str., Moscow, 119991, Russia
- 3 V.A. Kotelnikov Institute of Radioengineering and Electronics, 125009 Moscow, Russia
Abstract
We present here a concept of data recording in memory devices based on spin reorientation transition in magnetostrictive films or stress-mediated multiferroics. Retrieval of information can be non-destructively made by GMR reading. The principle of reading is demonstrated experimentally on a stress controlled FeCo(2nm) /TbCo2(6nm) /FeCo(2nm)(2nm) /Cu(3nm) /FeCo(2nm) /TbCo2(4nm) /FeCo(2nm) nanostructured layer.
How to cite
Dusch Y., Rudenko V., Tiercelin N., Giordano S., Preobrazhensky V., Pernod P. Гистерезисное магнетоcопротивление в устройстве магнитной памяти, управляемой давлением // Наноматериалы и наноструктуры - XXI век. 2012. № 2. С. 44–50.
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