Yu. А. Kabalnov1, M.M. Ivanova2, A.V. Kashin3
1–3 FSUE RFNC-VNIIEF (Sarov, Russian)
1 Kabalnov@niiis.nnov.ru, 2 Nayanova@yandex.ru, 3 aKashin@niiis.nnov.ru

Goal statement Optoelectronics elements are widely used in electronic equipment that provides an increase in their characteristics and reliability. For optoelectronics products, the so-called communication wavelength range ~ 1.3–1.55 μm is most preferable, since it corresponds to the transparency window of fiber-optic communication lines. Germanium with silicon generates a continuous series of solid solutions crystallizing in the diamond lattice, which allows expanding the spectral range of silicon-based optoelectronic elements into the communication range. In this regard, the task of creating effective radiation resistant optoelectronics elements for radioelectronic equipment: light-emitting and photodetector devices, as well as optoelectronic pairs based on Ge/Si heteroepitaxial structures is urgent.

Purpose Study the features for generation of promising radiation resistant optoelectronic products based on Ge/Si heteroepitaxial structures.

Results: Technological aspects of generation of Ge/Si non-acidic heteroepitaxial structures on Si (001) and SOI substrates using combined sublimation molecular beam epitaxy methods are considered. The principle possibility of using structures with an array of Ge/Si nanoislands as radiating and photodetector elements as part of optoelectronic pairs (OP) is shown. Versions of the structural version of OP including various combinations of active elements made on the basis of Ge/Si epitaxial structures are considered. A high level of resistance to γ-neutron radiation of optoelectronics products created on the basis of Ge/Si heteroepitaxial structures has been confirmed.

Practical significance: The received research results can be used in practice in the generation of optoelectronic components with high quantum yield based on Ge/Si heteroepitaxial structures.

Kabalnov Yu.A., Ivanova M.M., Kashin A.V. Features of generation of radiation resistant optoelectronic devices based on Ge/Si heteroepitaxial structures // Achievements of modern radioelectronics. 2026. V. 80. № 8. P. 102–117. DOI: https://doi.org/10.18127/j20700784-202608-13

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