A.S. Puzanov1, I.Yu. Zabavichev2, A.A. Potekhin3, S.V. Obolensky4
1–4 FSUE RFNC «All-Russian Research Institute of Experimental Physics» (Sarov, Russia)
1 puzanov@rf.unn.ru, 2 iyuzabavichev@niiis.nnov.ru, 3 potehinrf@gmail.com, 4 obolensk@rf.unn.ru

Problem statement. Mathematical models of charge carrier transport implemented in modern foreign automated design systems for micro- and nanoelectronics devices do not allow for full consideration of radiation effects, the complex nature of which becomes significant in submicron semiconductor structures.

Objective. Development and verification of a software package for physical and topological modeling of charge carrier transport in submicron semiconductor structures taking into account radiation exposure for calculating transient ionization processes and long-term changes in electrophysical characteristics in micro- and nanoelectronics devices.

Results. Based on continuum and stochastic models of charge carrier transport, a software package for modeling radiation effects in submicron semiconductor structures has been developed; some results of its application on original data from irradiation experiments are considered.

Practical significance. The developed software package is used to analyze the influence of radiation effects on micro- and nanoelectronics elements; its further development for the synthesis of submicron semiconductor structures optimized for the radiation resistance parameter is promising.

Puzanov A.S., Zabavichev I.Yu., Potekhin A.A., Obolensky S.V. Software package of physical and topological models of charge carrier transfer under radiation exposure and its practical applications // Achievements of modern radioelectronics. 2026. V. 80. № 8. P. 86–101. DOI: https://doi.org/10.18127/j20700784-202608-12

1. Bubennikov A.N. Modelirovanie integral`ny`x mikrotexnologij, priborov i sxem. M.: Vy`sshaya shkola. 1989. 320 s. (in Russian).
2. My`rova L.O., Chepizhenko A.Z. Obespechenie stojkosti apparatury` svyazi k ioniziruyushhim i e`lektromagnitny`m izlucheniyam. M.: Radio i svyaz`. 1988. 296 s.
3. Ziegler J.F. SRIM-2003. Nuclear Instruments and Methods in Physics Research B. 2004. V. 219–220. P. 1027–1036. doi: 10.1016/j.nimb.2004.01.208
4. Vvedensky D.D. Multiscale modeling of nanostructures. Journal of Physics: Condensed Matter. 2004. P. 1537–1576. doi: 10.1088/0953-8984/16/50/R01
5. Vasileska D., Goodnick S.M., Klimeck G. Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation. Boca Raton: CRC Press, 2010. 784 p.
6. Lundstrom M. Fundamentals of carrier transport. Cambridge University Press, 2000. 434 p.
7. Zabavichev I.Yu., Potexin A.A., Puzanov A.S., Obolenskij S.V., Kozlov V.A. Modelirovanie obrazovaniya kaskada smeshhenij i perexodny`x ionizacionny`x processov v kremnievy`x poluprovodnikovy`x strukturax pri nejtronnom vozdejstvii. Fizika i texnika poluprovodnikov. 2019. T. 53. № 9. S. 1279–1284. doi: 10.21883/FTP.2019.09.48139.23 (in Russian).
8. Zabavichev I.Yu., Puzanov A.S., Obolenskij S.V. Vliyanie processa formirovaniya edinichnogo klastera radiacionny`x defektov na provodimost` kanala tranzistornoj struktury`. Fizika i texnika poluprovodnikov. 2022. T. 56. № 7. S. 637–641. doi: 10.21883/FTP.2022.07.52752.07 (in Russian).
9. Xokni R., Istvud Dzh. Chislennoe modelirovanie metodom chasticz. M.: Mir. 1987. 640 s. (in Russian).
10. Zabavichev I.Yu., Obolenskaya E.S., Potexin A.A., Puzanov A.S., Obolenskij S.V., Kozlov V.A. Transport goryachix nositelej zaryada v Si, GaAs, InGaAs i GaN submikronny`x poluprovodnikovy`x strukturax s nanometrovy`mi klasterami radiacionny`x defektov. Fizika i texnika poluprovodnikov. 2017. T. 51. № 11. S. 1489–1492. doi: 10.21883/FTP.2017.11.45096.10 (in Russian).
11. Puzanov A.S., Obolenskij S.V. Osobennosti perenosa e`lektronov v bipolyarny`x tranzistorny`x strukturax s tonkoj bazoj pri vozdejstvii potoka kvantov vy`sokix e`nergij. Mikroe`lektronika. 2012. T. 41. № 4. S. 304–312. (in Russian).
12. Puzanov A.S., Obolenskij S.V., Kozlov V.A. Razogrev i relaksaciya e`lektronno-dy`rochnogo gaza v treke pervichnogo atom otdachi. Fizika i texnika poluprovodnikov. 2020. T. 54. № 8. S. 791–795. doi: 10.21883/FTP.2020.08.49627.03 (in Russian).
13. Puzanov A.S., Obolenskij S.V. Osobennosti stimulirovannogo izlucheniem proboya p-n perexoda s neodnorodny`m legirovaniem. Mikroe`lektronika. 2009. T. 38. № 1. S. 64–74. (in Russian).
14. Zi S.M. Fizika poluprovodnikovy`x priborov: V 2-x knigax. Kn. 1. M.: Mir. 1984. 456 s. (in Russian).
15. Van Roosbroeck W. Theory of the flow of electrons and holes in germanium and other semiconductors. Bell system technical journal. 1950. V. 29. № 4. P. 560–607. doi: 10.1002/j.1538-7305.1950.tb03653.x
16. Puzanov A.S., Obolenskij S.V., Kozlov V.A. Primenenie lokal`no-neravnovesnoj diffuzionno-drejfovoj modeli Kattaneo-Vernotta dlya opisaniya relaksacii fototoka v diodny`x strukturax pri vozdejstvii subpikosekundny`x impul`sov ioniziruyushhix izluchenij. Fizika i texnika poluprovodnikov. 2018. T. 52. № 11. S. 1295–1299. doi: 10.21883/FTP.2018.11.46586.08 (in Russian).
17. Constant E. Non-steady-state carrier transport in semiconductors in perspective with submicrometer devices. Hot-electron transport in semiconductors. Topics in Applied Physics. 1985. V. 54. P. 227–261. doi: 10.1007/3-540-13321-6_8
18. Stratton R. Diffusion of hot and cold electrons in semiconductor barriers. Physical Review. 1962. V. 126. № 6. P. 2002–2014. doi: 10.1103/PhysRev.126.2002
19. Blotekjaer K. Transport equations for in two-valley semiconductors. IEEE Transactions on electron devices. 1970. V. ED-17. № 1. P. 38–47. doi: 10.1109/T-ED.1970.16921
20. Wang C.T. A new set of semiconductor equations for computer simulation of submicron devices. Solid-State Electronics. 1985. V. 28. № 8. P. 783–788. doi: 10.1016/0038-1101(85)90065-6
21. Canali C., Jacoboni C., Nava F., Ottaviani G., Alberigi-Quaranta A. Electron drift velocity in silicon. Phys. Rev. B. 1975. V. 12. № 4. P. 2265–2284. doi: 10.1103/PhysRevB.12.2265
22. Jacoboni C., Reggiani L. The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials. Rev. Mod. Phys. 1983. V. 55. № 3. P. 645–705. doi: 10.1103/RevModPhys.55.645
23. Tang J.Y. and Hess K. Impact ionization of electrons in silicon (steady state). J. Appl. Phys. 1983. V. 54. № 9. P. 5139–5144. doi: 10.1063/1.332737
24. Fischetti M., Laux S. Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. Phys. Rev. B. 1988. V. 38. № 14. P. 9721–9745. doi: 10.1103/PhysRevB.38.972
25. Kotani T., Van Schilfgaarde M. Impact ionization rates for Si, GaAs, InAs, ZnS, and GaN in GW approximation. Phys. Rev. B. 2010. V. 81. 125201. doi: 10.1103/PhysRevB.81.125201
26. Grigor`ev E.G., Perlovich Yu.A., Solov`ev G.I., Udovskij A.L., Yakushin V.L. Fizicheskoe materialovedenie. Tom 4. Fizicheskie osnovy` prochnosti. Radiacionnaya fizika tverdogo tela. Komp`yuternoe modelirovanie. M.: MIFI. 2008. 696 s. (in Russian).
27. Gossik B.R. Disordered region in semiconductors bombarded by fast neutron. J. Appl. Phys. 1954. V. 30. № 9. P. 1214–1218. doi: 10.1063/1.1735295
28. Fleming R.M., Seager C.H., Lang D.V., Cooper P.J., Bielejec E., Campbell J.M. Effects of clustering on the properties of defects in neutron irradiated silicon. Journal of Applied Physics. 2007. V. 102. P. 043711. doi: 10.1063/1.2769783
29. Zabavichev I.Yu., Puzanov A.S., Obolenskij S.V., Kozlov V.A. Vliyanie potenciala rasseyaniya na radiacionny`x defektax na perenos nositelej zaryada v GaAs-strukturax. Fizika i texnika poluprovodnikov. 2020. T. 54. № 9. S. 945–951. doi: 10.21883/FTP.2020.09.49837.31 (in Russian).
30. Behle A.F., Zuleeg R. Fast neutron tolerance of GaAs JFETs operating in the hot electron range. IEEE Transactions on Electron Devices. 1972. V. ED-19. № 8. P. 993–995. doi: 10.1109/T-ED.1972.17532
31. Tarasova E.A., Puzanov A.S., Bibikova V.V., Volkova E.V., Zabavichev I.Y., Obolenskaya E.S., Potekhin A.A., Obolensky S.V. The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track. Proceedings of the 33rd European Modeling & Simulation Symposium, EMSS. Volume Details Volume Title Proceedings of the 33rd European Modeling & Simulation Symposium (EMSS 2021) Conference Location and Date Online September 15-17, 2021 Conference ISSN 2724-0029 Volume ISBN 978-88-85741-57-7. 2021. P. 289–294. doi: 10.46354/i3m.2021.emss.040
32. Komarov F.F. Defektoobrazovanie i trekoobrazovanie v tverdy`x telax pri obluchenii ionami sverxvy`sokix e`nergij. Uspexi fizicheskix nauk. 2003. T. 173. № 12. S. 1287–1318. doi: 10.3367/UFNr.0173.200312b.1287 (in Russian).
33. Puzanov A.S., Bibikova V.V., Zabavichev I.Yu., Obolenskaya E.S., Tarasova E.A., Vostokov N.V., Obolenskij S.V. Modelirovanie reakcii nizkobar`ernogo dioda Motta na vozdejstvie tyazhely`x zaryazhenny`x chasticz kosmicheskogo prostranstva. Pis`ma v zhurnal texnicheskoj fiziki. 2021. T. 47. № 6. S. 51–54. doi: 10.21883/PJTF.2021.06.50761.18607 (in Russian).
34. Puzanov A.S., Bibikova V.V., Zabavichev I.Yu., Obolenskaya E.S., Potexin A.A., Tarasova E.A., Vostokov N.V., Kozlov V.A., Obolenskij S.V. Modelirovanie reakcii sverxvy`sokochastotnogo nizkobar`ernogo neoxlazhdaemogo dioda Motta na vozdejstvie tyazhely`x zaryazhenny`x chasticz kosmicheskogo prostranstva i femtosekundny`x lazerny`x impul`sov. Fizika i texnika poluprovodnikov. 2021. T. 55.
    № 9. S. 743–747. doi: 10.21883/FTP.2021.09.51288.17 (in Russian).
35. Puzanov A.S., Obolenskij S.V., Kozlov V.A. Perenos nositelej zaryada cherez tonkuyu bazu geterobipolyarnogo tranzistora pri radiacionnom vozdejstvii. Fizika i texnika poluprovodnikov. 2015. T. 49. № 1. S. 71–75. (in Russian).
36. Puzanov A.S., Obolenskij S.V., Kozlov V.A. Vliyanie sluchajny`x neodnorodnostej v prostranstvennom raspredelenii klasterov radiacionny`x defektov na perenos nositelej zaryada cherez tonkuyu bazu geterobipolyarnogo tranzistora pri nejtronnom vozdejstvii. Fizika i texnika poluprovodnikov. 2016. T. 50. № 12. S. 1706–1712. (in Russian).
37. Zabavichev I.Yu., Potexin A.A., Puzanov A.S., Obolenskij S.V., Kozlov V.A. Degradaciya xarakteristik bipolyarny`x tranzistorov na osnove GaAs s tonkoj bazoj pri vozniknovenii v nix nanometrovy`x klasterov radiacionny`x defektov pod dejstviem nejtronnogo oblucheniya. Fizika i texnika poluprovodnikov. 2017. T. 51. № 11. S. 1520–1524. doi: 10.21883/FTR.2017.11.45103.17 (in Russian).
38. Shukajlo V.P., Pudov V.P., Tkachev O.V., Dubrovskix S.M., Kupy`rina T.V., Berezovskij A.G. Ocenka velichiny` razbrosa radiacionnoj reakcii bipolyarny`x tranzistorov pri nejtronnom obluchenii. Voprosy` atomnoj nauki i texniki. Ser.: Fizika radiacionnogo vozdejstviya na radioe`lektronnuyu apparaturu. 2013. № 4. S. 84–87. (in Russian).
39. Shobolova T.A., Korotkov A.V., Petryakova E.V., Lipatnikov A.V., Puzanov A.S., Obolenskij S.V., Kozlov V.A. Sravnenie radiacionnoj stojkosti perspektivny`x bipolyarny`x i geterobipolyarny`x tranzistorov. Fizika i texnika poluprovodnikov. 2019. T. 53. № 10. S. 1391–1394. doi: 10.21883/FTP.2019.10.48295.41 (in Russian).
40. Puzanov A.S., Venediktov M.M., Obolenskij S.V., Kozlov V.A. Raschetno-e`ksperimental`noe modelirovanie obratimy`x sboev yacheek staticheskoj pamyati submikronny`x mikrosxem pri vozdejstvii potokov nejtronov. Fizika i texnika poluprovodnikov. 2019. T. 53. № 9. S. 1250–1256. doi: 10.21883/FTP.2019.09.48133.16 (in Russian).
41. Zabavichev I.Yu., Puzanov A.S., Obolenskij S.V. Vliyanie processa obrazovaniya edinichnogo klastera radiacionny`x defektov na pereklyuchenie sostoyaniya tranzistornoj yachejki pamyati. Fizika i texnika poluprovodnikov. 2023. T. 57. № 4. S. 270–275. doi: 10.21883/FTP.2023.04.55897.15k (in Russian).
42. Loginov B.A., Blinnikov D.Yu., Vtorova V.C., Kirillova V.V., Lyashko E.A., Makeev V.S., Pervy`x A.R., Abrosimova N.D., Zabavichev I.Yu., Puzanov A.S., Volkova E.V., Tarasova E.A., Obolenskij S.V. Osobennosti transformacii mikrorel`efa struktur «kremnij na izolyatore» pri vozdejstvii fotonny`x i korpuskulyarny`x izluchenij. Zhurnal texnicheskoj fiziki. 2023. T. 93. № 7. S. 1025–1031. doi: 10.21883/JTF.2023.07.55764.91-23 (in Russian).
43. Puzanov A.S., Zabavichev I.Yu., Abrosimova N.D., Bibikova V.V., Volkova E.V., Nedoshivina A.D., Potexin A.A., Tarasova E.A., Xazanova S.V., Loginov B.A., Blinnikov D.Yu., Vtorova V.S., Kirillova V.V., Lyashko E.A., Makeev V.S., Pervy`x A.R., Obolenskij S.V. Fluktuacionny`j analiz mikrorel`efa poverxnosti struktur «kremnij na izolyatore» posle radiacionnogo vozdejstviya. Fizika i texnika poluprovodnikov. 2024. T. 59. № 12. S. 668–675. doi: 10.61011/FTP.2024.12.59827.7548 (in Russian).
44. Obolenskij S.V., Volkova E.V., Loginov A.B., Loginov B.A., Tarasova E.A., Puzanov A.S., Korolev S.A. Kompleksnoe issledovanie klaste­rov radiacionny`x defektov v GaAs strukturax posle nejtronnogo vozdejstviya. Pis`ma v zhurnal texnicheskoj fiziki. 2021. T. 47. № 5.
    S. 38–41. doi: 10.21883/PJTF.2021.05.50676.18608 (in Russian).
45. Volkova E.V., Loginov A.B., Loginov B.A., Tarasova E.A., Puzanov A.S., Korolev S.A., Semenovy`x E.S., Xazanova S.V., Obolenskij S.V. E`ksperimental`ny`e issledovaniya modifikacij xarakteristik GaAs-struktur s kontaktami Shottki posle vozdejstviya by`stry`x nejtronov. Fizika i texnika poluprovodnikov. 2021. T. 55. № 10. S. 846–849. doi: 10.21883/FTP.2021.10.51431.19 (in Russian).
46. Golikov O.L., Kodochigov N.E., Obolenskij S.V., Puzanov A.S., Tarasova E.A., Xazanova C.V. Analiz neodnorodnostej DpHEMT-struktury` na osnove GaAs/In0.53Ga0.47As posle nejtronnogo vozdejstviya. Mikroe`lektronika. 2024. T. 53. № 1. S. 3–7. doi: 10.31857/S0544126924010017 (in Russian).
47. Krivulin D.O., Pashen`kin I.Yu., Gorev R.V., Yunin P.A., Sapozhnikov M.V., Grunin A.V., Zaxarova S.A., Leont`ev V.N. Vliyanie radia­cionnogo vozdejstviya na magnitny`e svojstva plenok ferromagnetik/IrMn s obmenny`m sdvigom. Zhurnal texnicheskoj fiziki. 2023.
    T. 93. № 7. S. 907–912. doi: 10.21883/JTF.2023.07.55744.72-23 (in Russian).
48. Tarasova E.A., Obolenskij S.V., Xazanova S.V., Grigor`eva N.N., Golikov O.L., Ivanov A.B., Puzanov A.S. Kompensaciya nelinejnosti stok-zatvornoj vol`t-ampernoj xarakteristiki v polevy`x tranzistorax s dlinoj zatvora ~ 100 nm. Fizika i texnika poluprovodnikov. 2020. T. 54. № 9. S. 968–973. doi: 10.21883/FTP.2020.09.49841.35 (in Russian).
49. Tarasova E.A., Xazanova S.V., Golikov O.L., Puzanov A.S., Obolenskij S.V., Zemlyakov V.E. Analiz vliyaniya spejserny`x sloev na nelinejny`e iskazheniya vol`t-amperny`x xarakteristik pHEMT na osnove soedineniya GaAlAs/InGaAs. Fizika i texnika poluprovodnikov. 2021. T. 55. № 10. S. 872–876. doi: 10.21883/FTP.2021.10.51436.35 (in Russian).
50. Tarasova E.A., Xazanova S.V., Golikov O.L., Puzanov A.S., Obolenskij S.V., Zemlyakov V.E. Analiz nelinejny`x iskazhenij DpHEMT struktur na osnove soedineniya GaAs/InGaAs s dvuxstoronnim del`ta-legirovaniem. Fizika i texnika poluprovodnikov. 2022. T. 56. № 9. S. 844–847. doi: 10.21883/FTP.2022.09.53402.37 (in Russian).
51. Khazanova S.V., Golikov O.L., Puzanov A.S., Tarasova E.A., Zabavichev I.Y., Potekhin A.A., Obolenskaya E.S., Ivanov A.S., Paveliev D.G.,
    Obolensky S.V. Calculating Current-Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods. Bulletin of the Russian Academy of Sciences: Physics. 2023. V. 87. № 6.
    P. 800–804. doi: 10.3103/s1062873823701964
52. Golikov O.L., Zabavichev I.Yu., Ivanov A.S., Obolenskij S.V., Obolenskaya E.C., Pavel`ev D.G., Potexin A.A., Puzanov A.C., Taraso-
    va E.A., Xazanova S.V. Perenos e`lektronov v bipolyarnom tranzistore so sverxreshetkoj v oblasti e`mittera. Mikroe`lektronika. 2024. T. 53. № 1. S. 51–57. doi: 10.31857/S0544126924010051 (in Russian).
53. Pavel`ev D.G., Vasil`ev A.P., Kozlov V.A., Obolenskaya E.S. Radiacionnaya stojkost` teragerczovy`x diodov na osnove GaAs/AlAs-sverxreshetok. Fizika i texnika poluprovodnikov. 2018. T. 52. № 11. S. 1337–1345. doi: 10.21883/FTP.2018.11.46595.17 (in Russian).
54. Ivanov A.S., Pavel`ev D.G., Obolenskij S.V., Obolenskaya E.S. Radiacionnaya stojkost` istochnika subteragerczovogo izlucheniya iz geterodina na generatore na diode Ganna i umnozhitelya na poluprovodnikovoj sverxreshetke. Zhurnal texnicheskoj fiziki. 2021. T. 91. № 10. S. 1501–1503. doi: 10.21883/JTF.2021.10.51362.133-21 (in Russian).
55. Ivanov A.S., Pavel`ev D.G., Obolenskij S.V., Obolenskaya E.S. Radiacionnaya stojkost` istochnika subteragerczovogo izlucheniya posle nejtronnogo vozdejstviya. Fizika i texnika poluprovodnikov. 2022. T. 56. № 8. S. 770–773. doi: 10.21883/FTP.2022.08.53143.29 (in Russian).
56. Kardona M. Osnovy` fiziki poluprovodnikov. M.: Fizmatlit. 2002. 560 s. (in Russian).
57. Valiev K.A., V`yurkov V.V., Orlikovskij A.A. Kremnievaya nanoe`lektronika: problemy` i perspektivy`. Uspexi sovremennoj ra­dioe`lektroniki. 2010. № 6. S. 7–22. (in Russian).
58. Puzanov A.S., Obolenskij S.V., Kozlov V.A., Volkova E.V., Pavel`ev D.G. Vy`sokochastotnoe detektirovanie processov formirovaniya i stabilizacii klastera radiacionny`x defektov v poluprovodnikovy`x strukturax. Fizika i texnika poluprovodnikov. 2015. T. 49. № 12. S. 1585–1592. (in Russian).