Technological aspects of the manufacture of MMIC

А.G. Gudkov; V.N. Vyuginov; V.V. Popov; Yu.V. Solov’ev; N.К. Travin; S.V. Chizhikov

doi:10.18127/j20700784-202208-03

Technological aspects of the manufacture of MMIC

А.G. Gudkov¹, V.N. Vyuginov², V.V. Popov³, Yu.V. Solov’ev⁴, N.К. Travin⁵, S.V. Chizhikov⁶

research article UDC 621.382 Pages: 52-71 doi.org/10.18127/j20700784-202208-03

^1,6 Bauman Moscow State Technical University (Moscow, Russia)
² Electronic Instrumentation at V.I. Ulyanov (Lenin) SPbGETU «LETI» (St. Petersburg, Russia)
³ PJSC «Svetlana» (St. Petersburg, Russia)
^4,5 JSC «Svetlana-Electronpribor» (St. Petersburg, Russia)

Keywords: Silicon carbide MIS microwave mechanical processing electrical resistivity

Abstract

The switch and low-noise amplifier based on field-effect transistors on heterostructures used in various receiver designs must be of high quality, therefore, it is necessary to conduct a study of the influence of the manufacturing error of microwave transistors for MIC on mechanical and electrical parameters.

The paper presents the results of an experimental study of the effect of temperature exposure on the resistivity of semi-insulating silicon carbide substrates. The optimization of the processes of double-sided grinding and polishing was also carried out, and it was experimentally revealed that the developed technology of cutting single crystals of semi-insulating silicon carbide meets all modern requirements for this process. The influence of cutting technology, mechanical processing on the mechanical parameters of the substrate of semi-insulating silicon carbide has been studied, and the effect of the annealing temperature of semi-insulating silicon carbide on its electrical resistivity has been studied.

Received: 29.06.2022
Approved after review: 19.07.2022
Accepted: 30.07.2022

How to cite

Гудков А.Г., Вьюгинов В.Н., Попов В.В., Соловьев Ю.В., Травин Н.К., Чижиков С.В., Агандеев Р.В., Шашурин В.Д. Технологические аспекты изготовления МИС СВЧ // Успехи современной радиоэлектроники. 2022. T. 76. № 8. С. 52–71. DOI: https://doi.org/10.18127/j20700784-202208-03

References

Ostroumov A.G., Rogachev A.A., Losev O.V. Pioner poluprovodnikovoy elektroniki. Sb. Nauchnykh trudov. Fizika: problemy, istoriya, lyudi. Pod red. V.M. Tuchkevicha. L.: Nauka. 1986. [in Russian]
Novikov M.A., Losev O.V. Pioner poluprovodnikovoy elektroniki. FTT. 2004. № 46. S. 5–9. [in Russian]
Anikin M.M., Andreev A.N., Lebedev A.A., Pyatko S.N., Rastegaeva M.G., Savkina N.S., Strel'chuk A.M., Syrkin A.L., Chelnokov V.E. Vysokotemperaturnyy diod Shottki. FTP. 1991. № 25. [in Russian]
Anikin M.M., Ivanov P.A., Syrkin A.L., Tsarenkov B.V., Chelnokov V.E. SiC 6H – polevoy tranzistor s rekordnoy dlya karbidkremnevykh tranzistorov krutiznoy. Pis'ma v ZhTF. 1989. № 15. [in Russian]
Lebedev A.A., Anikin M.M., Rastegaeva M.G., Savkina N.S., Syrkin A.L., Chelnokov V.E. Polevoy tranzistor na osnove 6H-SiC s zatvorom v vide dioda Shottki. FTP. 1995. № 29. S. 1231–1236. [in Russian]
Anikin M.M., Andreev A.N., Pyatko S.N., Savkina N.S., Strelchuk A.M., Syrkin A.L., Chelnokov V.E. UV photodetectors in 6H-SiC, Sensotrs and Actuators A. 1992. № 33. P. 91–93.
Bludov A.V., Boltovets M.S., Vasilevski K.V., Zorenko A.V., Zakentes K., Lebedev A.A., Krivitsa V.A. Simulation and prototype fabrication of microwave modulators with 4H-SiC p-I-n diode. Material science Forum. 2004. V. 457–460. P. 1089–1092.
Vasilevski K.V., Zorenko A.V., Zekentes K. Experimentsl observation of microwave oscillations produced by pulsed silicon carbide IMPATT diodes. Electron. Letters. 2001. № 37 (7). P. 466–467.
Lebedev A.A., Belov S.V., Lebedev S.P., Litvin D.P. i dr. Nachalo promyshlennogo vypuska SiC podlozhek i priborov na ikh osnove. Trudy 1-y rossiysko-belorusskoy nauch.-tekhnich. konf. «Elementnaya baza otechestvennoy radioelektroniki», posvyashchennoy 110-yu so dnya rozhdeniya O.V. Loseva. Pod red. A.E. Rassadina. N. Novgorod: Nizhegorodskaya radiolaboratoriya. 2013. V 2-kh t. T. 1. S. 23–24. [in Russian]
Tairov Yu.M., Tsvetkov V.F. Investigation of Growth proceses of ingots of silicon carbide single crystals. J.Crystal Growth. 1978. № 43. P. 209–212.
Patent USSR № 403275 (1970), Patent GB № 1458445 (21/02/74), Patent USA (1970) № 4147575 (03/04/79). Vodakov Yu.A., Mokhov E.N.
Mokhov E.N., Shulpina I.L., Tregubova A.S., Vodakov Yu.A. Cryst. Res. Technol. 1981. № 16.
Karpov S.Yu., Makarov Yu.N., Mokhov E.N. and etc. Analysis of silicon carbide growth by sublimation sandwich method, J. of Crystal Growth. 1997. № 173. P. 408–416.
Zi S.M. Fizika poluprovodnikovykh priborov. M.: Energiya. 1973. [in Russian]
V'yuginov V.N., Gudkov A.G., Popov V.V. Povyshenie nadezhnosti i kachestva GIS i MIS SVCh. Kn. 3. M.: OOO NTP «Virazh-Tsentr». 2016. [in Russian]
http://www.lapmaster.co.uk
http://www.logitech.co.uk
http://www.speedfam.com/en/index.html
http://www.peter-wolters.com/
Zhang W., Meyer B.K. Growth of GaN quasi-substrates by hydride vapor phase epitaxy. Phys. Stat. Sol. 2003. V. 0. № 6. P. 1571–1582.
Ambacher O. Growth and applications of Group III-nitrides. J. Phys. D: Appl. Phys. 1998. № 31. P. 2653–2710.
GOST 25948-83. Izmerenie udel'nogo elektricheskogo soprotivleniya i koeffitsienta Kholla. [in Russian]
GOST R8.623-2006 GSI. Otnositel'naya dielektricheskaya pronitsaemost' i tangens ugla dielektricheskikh poter' tverdykh dielektrikov. Metodiki vypolneniya izmereniy v diapazone sverkhvysokikh chastot. [in Russian]
http://www.semimap.de/COREMA-WT.htm
V'yuginov V.N., Ulanova T.A., Grigor'ev A.D. Izmerenie parametrov karbid-kremnievykh podlozhek na SVCh. Izvestiya VUZov Rossii. Radioelektronika. 2013. № 3. [in Russian]
Gol'dshteyn R.V., Osipenko M.N. Khimiko-mekhanicheskoe polirovanie. Ch. 1. Osnovnye zakonomernosti. Institut problem mekhaniki im. A.Yu. Ishlinskogo RAN. Moskva. [in Russian]

[1] Ostroumov A.G., Rogachev A.A., Losev O.V. Pioner poluprovodnikovoy elektroniki. Sb. Nauchnykh trudov. Fizika: problemy, istoriya, lyudi. Pod red. V.M. Tuchkevicha. L.: Nauka. 1986. [in Russian]

[2] Novikov M.A., Losev O.V. Pioner poluprovodnikovoy elektroniki. FTT. 2004. № 46. S. 5–9. [in Russian]

[3] Anikin M.M., Andreev A.N., Lebedev A.A., Pyatko S.N., Rastegaeva M.G., Savkina N.S., Strel'chuk A.M., Syrkin A.L., Chelnokov V.E. Vysokotemperaturnyy diod Shottki. FTP. 1991. № 25. [in Russian]

[4] Anikin M.M., Ivanov P.A., Syrkin A.L., Tsarenkov B.V., Chelnokov V.E. SiC 6H – polevoy tranzistor s rekordnoy dlya karbidkremnevykh tranzistorov krutiznoy. Pis'ma v ZhTF. 1989. № 15. [in Russian]

[5] Lebedev A.A., Anikin M.M., Rastegaeva M.G., Savkina N.S., Syrkin A.L., Chelnokov V.E. Polevoy tranzistor na osnove 6H-SiC s zatvorom v vide dioda Shottki. FTP. 1995. № 29. S. 1231–1236. [in Russian]

[6] Anikin M.M., Andreev A.N., Pyatko S.N., Savkina N.S., Strelchuk A.M., Syrkin A.L., Chelnokov V.E. UV photodetectors in 6H-SiC, Sensotrs and Actuators A. 1992. № 33. P. 91–93.

[7] Bludov A.V., Boltovets M.S., Vasilevski K.V., Zorenko A.V., Zakentes K., Lebedev A.A., Krivitsa V.A. Simulation and prototype fabrication of microwave modulators with 4H-SiC p-I-n diode. Material science Forum. 2004. V. 457–460. P. 1089–1092.

[8] Vasilevski K.V., Zorenko A.V., Zekentes K. Experimentsl observation of microwave oscillations produced by pulsed silicon carbide IMPATT diodes. Electron. Letters. 2001. № 37 (7). P. 466–467.

[9] Lebedev A.A., Belov S.V., Lebedev S.P., Litvin D.P. i dr. Nachalo promyshlennogo vypuska SiC podlozhek i priborov na ikh osnove. Trudy 1-y rossiysko-belorusskoy nauch.-tekhnich. konf. «Elementnaya baza otechestvennoy radioelektroniki», posvyashchennoy 110-yu so dnya rozhdeniya O.V. Loseva. Pod red. A.E. Rassadina. N. Novgorod: Nizhegorodskaya radiolaboratoriya. 2013. V 2-kh t. T. 1. S. 23–24. [in Russian]

[10] Tairov Yu.M., Tsvetkov V.F. Investigation of Growth proceses of ingots of silicon carbide single crystals. J.Crystal Growth. 1978. № 43. P. 209–212.

[11] Patent USSR № 403275 (1970), Patent GB № 1458445 (21/02/74), Patent USA (1970) № 4147575 (03/04/79). Vodakov Yu.A., Mokhov E.N.

[12] Mokhov E.N., Shulpina I.L., Tregubova A.S., Vodakov Yu.A. Cryst. Res. Technol. 1981. № 16.

[13] Karpov S.Yu., Makarov Yu.N., Mokhov E.N. and etc. Analysis of silicon carbide growth by sublimation sandwich method, J. of Crystal Growth. 1997. № 173. P. 408–416.

[14] Zi S.M. Fizika poluprovodnikovykh priborov. M.: Energiya. 1973. [in Russian]

[15] V'yuginov V.N., Gudkov A.G., Popov V.V. Povyshenie nadezhnosti i kachestva GIS i MIS SVCh. Kn. 3. M.: OOO NTP «Virazh-Tsentr». 2016. [in Russian]

[16] http://www.lapmaster.co.uk

[17] http://www.logitech.co.uk

[18] http://www.speedfam.com/en/index.html

[19] http://www.peter-wolters.com/

[20] Zhang W., Meyer B.K. Growth of GaN quasi-substrates by hydride vapor phase epitaxy. Phys. Stat. Sol. 2003. V. 0. № 6. P. 1571–1582.

[21] Ambacher O. Growth and applications of Group III-nitrides. J. Phys. D: Appl. Phys. 1998. № 31. P. 2653–2710.

[22] GOST 25948-83. Izmerenie udel'nogo elektricheskogo soprotivleniya i koeffitsienta Kholla. [in Russian]

[23] GOST R8.623-2006 GSI. Otnositel'naya dielektricheskaya pronitsaemost' i tangens ugla dielektricheskikh poter' tverdykh dielektrikov. Metodiki vypolneniya izmereniy v diapazone sverkhvysokikh chastot. [in Russian]

[24] http://www.semimap.de/COREMA-WT.htm

[25] V'yuginov V.N., Ulanova T.A., Grigor'ev A.D. Izmerenie parametrov karbid-kremnievykh podlozhek na SVCh. Izvestiya VUZov Rossii. Radioelektronika. 2013. № 3. [in Russian]

[26] Gol'dshteyn R.V., Osipenko M.N. Khimiko-mekhanicheskoe polirovanie. Ch. 1. Osnovnye zakonomernosti. Institut problem mekhaniki im. A.Yu. Ishlinskogo RAN. Moskva. [in Russian]

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