Diffraction of Strong Electromagnetic Wave on Semiconductive Elements in the Rectangular Waveguide

The based on the incomplete Galerkin method modified full-wave electrodynamic algorithm has been suggested for the wave diffraction on the dielectric and semiconductor elements (plates), which are partially filling the rectangular waveguide (RW) cross-section including the taking into account the nonlinear semiconductor properties in the presence of strong electromagnetic wave influence. The nonlinear properties are taken into account by phenomenological equations. The diffraction of RW H10 - wave on the partially filling and symmetrically located in the E- plane one and two nonlinear semiconductor plates have been analyzed. The power limiting is theoretically investigated. It has been shown that there is the optimal distance between the thin semiconductor plates which provides the maximal attenuation of microwave power.

The state of the problem is typical for the stationary processes (harmonic in time) in the supposition that the nonlinearity is caused by charge carrier heating and impact ionization effects, which are slow as compared with electromagnetic oscillations. In this case one may consider the media electrophysical parameters, which are the functions of coordinates, also as the functions of high-frequency wave amplitude, and the process as fixed-frequency (harmonic in time).

In this paper the working regimes of possible nonlinear devices have been investigated using the numerical simulation for one and two semiconductive plates in the RW. The regimes of transfer power limiting and nonlinear back-scattered radiation control have been considered, that may be used for creation of control and limiter microwave devices. The modeling is corresponds to InSb parameters at the temperature T = 77 K. The results also may be used for the modeling of gas plasma.