VLSI Circuit Simulation Problems

In the present paper the features of physical simulation oriented on application to device and circuit CAD are discussed. The special attention is given to principles of construction of physical models with reference to the circuit simulation program SPICE.

The problem of construction of an adequate physical model of fully depletion SOI MOSFET nanotransistor is considered.

The capabilities of actuation in the program SPICE of original SOI MOSFET nanotransistor models are analyzed. The procedure for adapting of transistor model suitable for circuit simulation means HSPICE, carried out by means of the Opened interface of the given program is described.