2014
- Monolithic integral microwave devices pp. 37-55
- The production development of finish surface processing technology of SiC epi-ready wafers pp. 33-36
- Resistivity measuring methods of the semi-insulating SiC wafers pp. 27-32
- Ranging of the climatic extremal territories on the basis of the fuzzy logic theory pp. 4-10
- The production technology of SiC bulk crystal slicing pp. 22-25
- The optimization of the mechanical surface processing technology of SiC wafers pp. 12-14
- Semi-insulating 6H-SiC wafers for modern electronics pp. 4-10
- Monolithic integral microwave devices pp. 45-59
- Complex approach for development of microwave frequency component cells in integral implementation pp. 36-43
- The temperature effect on resistivity of SiC wafers pp. 32-35
- Resistivity measuring methods of the semi-insulating SiC wafers pp. 27-31
- The production development of finish surface processing technology of SiC epi-ready wafers pp. 24-26
- The optimization of the mechanical surface processing technology of SiC wafers pp. 21-23
- The production technology of SiC bulk crystal slicing pp. 17-20
- Semi-insulating 6H-SiC wafers for modern electronics pp. 9-15
- The current state and the prospects of microwave device development at JSC «Svetlana pp. 4-8
- Modeling of antennas-applicators of the unified antenna lattices for radiothermomapping multichannel systems pp. 17-26
- The electronic module of the multichannel microwave circuit for radio thermomapping systems pp. 27-34