N.V. Vishnyakov

Н.В. Вишняков

5 articles 2012–2019

Radioengineering 5

2019

Method to define charge carrier recombination rates in active layers of heterojunction HIT solar cells Radioengineering, No. 11, 2019 pp. 88-95
Complex local diagnostics of thin-film GST structures with phase transitions Radioengineering, No. 11, 2019 pp. 80-87
Influence of localized states on the effective height of metal – amorphous hydrogenated silicon potential barrier Radioengineering, No. 11, 2019 pp. 71-79

2017

Investigation of localized states in barrier structures of electronic elements based on amorphous hydrogenized silicon Radioengineering, No. 5, 2017

2012

Physical Processes in Barrier Structures Based on Disordered and Nanostructured Semiconductors Radioengineering, No. 3, 2012 pp. 81-89