M.P. Apin

М.П. Апин

7 articles 2015–2018

Radioengineering 7

2018

Optimization of the characteristics of the power amplifier on domestic bipolar transistors in the range from 1 to 2 GHz Radioengineering, No. 8, 2018 pp. 84-88

2017

Modeling the characteristics of bipolar transistor 2T937 Part II. The frequency characteristics Radioengineering, No. 7, 2017 pp. 129-135
Modeling the characteristics of bipolar transistor 2T937 Part I. Static characteristics Radioengineering, No. 7, 2017 pp. 125-128

2016

Design of powerful broadband amplifiers on domestic element base over the range of 1-2 GHz Radioengineering, No. 7, 2016 pp. 4-9
New type of traveling wave tube Radioengineering, No. 3, 2016 pp. 81-84

2015

Design of broadband high power amplifier modules over the range of 2-4 GHz with an output power of 50 W Radioengineering, No. 10, 2015 pp. 87-92
New type of traveling wave tube Radioengineering, No. 7, 2015 pp. 6-8