V.A. Iovdalsky - Dr. Sc. (Eng.), Head of Department, JSC «RPC «Istok» named after Shokin (Fryazino, Moscow reg.); Associate Professor, Moscow Technological University (MIREA) N.V. Ganyushkina - Employee, JSC «RPC «Istok» named after Shokin (Fryazino) V.P. Marin - Academic APK, Dr. Sc. (Eng.), Professor, Moscow Technological University (MIREA) V.S. Seregin - Dr. Sc. (Eng.), General Director - General Designer, JSC «SPA «NIITAL» (Moscow) I.A. Sokolov - Ph. D. (Eng.), General Director - General Designer, JSC «NII «Micropribor» named after G.J. Guskov (Moscow)

The results of investigating the interaction of thermal fields of four Schottky FET crystals of microwave HIC fragment with parallel power addition are presented. It is shown that the increase of the heat conductivity factor of electro- and thermal plate (of additional heat sink) is leading to total decrease of the plate temperature level due to integrated heat sink effect increase and cooling of transistors contacting with the plate. Besides, with the increase of the heat conductivity factor the offset of temperature maximum from the upper transistor crystal to the lower one is observed. The developed microwave HIC design involves the use of crystals of more powerful transistors (up to several tens of watts), appearing in recent years.

 

1. Pat. RF № 2298255. Moshhnaja gibridnaja integralnaja skhema SVCH-diapazona / Iovdalskijj V.A., Pchelin V.A., Lapin V.G., Morgunov V.G.; prioritet 12.08.05.
2. Iovdalskijj V.A., Pchelin V.A., Lapin V.G., Tregubov V.B., Moldovanov JU.I., Kocjuba A.M. Uluchshenie kharakteristik GIS vykhodnogo kaskada usilitelja moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2015. № 4(527). S. 63−67.
3. Iovdalskijj V.A., Ganjushkina N.V., Pchelin V.A. Slozhenie moshhnosti PTSH v GIS usilitelnykh kaskadov SVCH-diapazona // LAP LAM-BERT. Academic Publishing. Omni Scriptum GmbH and C0.KG. Heinrich-Bucking-Str. 6-8. 66121 Saarbrucken. Deutschland. 06.07.2015. P. 120.
4. Iovdalskijj V.A., Lapin V.G., Pchelin V.A., Grinberg D.S. Mnogokristalnyjj sostavnojj PTSH dlja GIS usilitelejj moshhnosti SVCH-diapazona // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2015. № 4(527). S. 74−76.
5. Pat. RF № 2541725ju MPK N 01 L 23/48. Vyvodnaja ramka dlja mnogokristalnogo poluprovodnikovogo pribora SVCH / Iovdalskijj V.A., Dudinov K.V., Morgunov V.G., Kudrova T.S.; prioritet 23.07.2013.
6. Iovdalskijj V.A., Ganjushkina N.V., Morgunov V.G., Gerasimenko S.V. Teplovojj analiz raboty moshhnojj GIS s integralnym teplootvodom ot kristallov poluprovodnikovykh priborov // EHlektronnaja tekhnika. Ser. 1. SVCH-tekhnika. 2012. № 2(513). S. 57−74.