350 rub
Journal Science Intensive Technologies №2 for 2011 г.
Article in number:
Keywords: microwave radiation detection material modification low-temperature plasma flow
Authors:
В. А. АЛЕКСАНДРОВ, А. А. СЕРДОБИНЦЕВ, А. Г. ВЕСЕЛОВ Саратовский филиал института радиотехники и электроники им. В. А. Котельникова РАН E-mail: AlexandrovVA@gmail.com, SerdobintsevAA@info.sgu.ru, VeselovaLP @info.sgu.ru
Abstract:
Ability of vanadium thin films modification in concentrated flow of low-temperature plasma is shown. Modification can take place due to variation of deposition conditions in direct current magnetron sputtering system. It was found out that interface between differently modified V films detects UHF radiation; sensitivity of experimental samples were up to 40 mV/W in the UHF power range of 60 dB.
Pages: 34-36
References
  1. Сердобинцев А.А., Бурылин Е.И., Веселов А.Г., Кирясова О.А., Джумалиев А.С. // ЖТФ. 2008. Т. 78. Вып. 3.
    С. 83 - 85.
  2. Александров В.А., Веселов А.Г., Кирясова О.А., Сердобинцев А.А. // ЖТФ. 2009. Т. 79. Вып. 8.
  3. Веселов А.Г., Рябушкин С.Л., Шуллер И.Я. // Письма
    в ЖТФ. 1992. Т.18. Вып.11.
  4. Helmersson U., Lattemann M., Bohlmark J., Ehiasarian A.P., Gudmundsson J.T. // Thin Solid Films. 2006. 513 (1 - 2). P. 1 - 24.
  5. Siegel P.H.  THz  technology: an overview // Intern. J. High  Speed Electronics and Systems. 2003. V. 13. P. 351 - 394.