I.V. Libkind, V.M. Golovin, S.P. Nedayvoda, N.B. Ponomarev, A.V. Zakharov

Semiconductor radiation detectors with internal gain of the charge stemming from the impact ionization - avalanche pho-todiodes (APD) ? were developed in the mid-twentieth century. Advantages APD - high speed and quantum efficiency (90 %), and a wide dynamic range. Suffice well known and APD operating in Geiger mode (G-APDs). This APD suitable for detection of single photons, but it is discrete devices. Common failings APD is the need for a sufficiently high-voltage power supply and relatively low gain. Qualitative leap in this area was the creation of an APD, based of the Metal-Resistor-Semiconductor (MRS-APD) structure. This is Solid State Photomultiplier. This works on the exploration and production equipment were initiated in the late 90's and are currently on the basis of JSC «Center for Advanced Technology and Equipment» (CPTA), together with the technologists and designers of JSC «Voshod» - Kaluga radiotube plant (JSC «Voshod»-KRLZ). Industrial base is a semiconductor factory of the JSC «Voshod»-KRLZ. The results was patented JSC «CPTA»: Patents of Russian Federation № 1644708 (1989), № 2105388 (1996), № 2142175 (1998), № 2185689 (2001), № 2284614 (2005). General features of the APD-MRS: - High quantum efficiency; - High speed; - High internal gain; - Record detectivity; - Ease of use. Our APD-MRS had already been used for research in several major international research projects (among which high-scintillation detector of ionizing particles on the basis of the APD-MRS for experiment ALICE, the Large Hadron Collider (LHC), CERN, Switzerland) and showed good results. Prospects of are wide enough, it is not only science but also medicine, engineering, industrial electronics, nanotechnology, systems for special applications.