Yu.L. Koziratsky1, V.S. Kalinin2, V.A. Shamarin3

1-3 MESC AF "Air Force Academy named after prof. N.E. Zhukovsky and Yu.A. Gagarin" (Voronezh, Russia)

Statement of the problem. Formulation of the problem. To date, there are no analytical models that would adequately reflect the processes that occur in a semiconductor photodetector when exposed to powerful laser radiation, and reliably predict its response to extreme external influences.

Purpose. On the basis of the use of the methods of the band theory, to develop a methodological approach to the construction of models reflecting the processes in a semiconductor photodetector under the influence of powerful laser radiation.

Results. Based on the use of the methods of the band theory to describe the process of the appearance and flow of a photocurrent in a semiconductor when exposed to high-power laser radiation and the theory of automatic control, a methodological approach to the construction of models of the effect of laser radiation on a semiconductor photodetector has been developed.

Practical significance. The proposed methodological approach makes it possible, without carrying out experimental studies, to evaluate the detecting capabilities of semiconductor photodetectors of any type for various parameters of the acting laser radiation. This makes it possible to develop proposals for both protective measures for optoelectronic surveillance systems, and for effective methods of influencing it with optical interference.

Koziratsky Yu.L., Kalinin V.S., Shamarin V.A. Methodical approach to the construction of models reflecting the processes in
a semiconductor photodetector when exposed to high-power laser radiation. Radiotekhnika. 2022. V. 86. № 2. P. 87−94.
DOI: https://doi.org/10.18127/j00338486-202202-10 (In Russian)

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