V.I. Danilchenko

JSC «Taganrog Scientific Research Institute of Communications» (Taganrog, Russian) vdanilchenko@sfedu.ru

One of the main directions of development of modern radio electronic systems (RES) is the ever-wider development of the microwave range, leading to an increase in their quality characteristics (channels, wireless data transmission rate, etc.) The main consumers of microwave devices and systems based on them are high-speed systems (in the future ≥ 100 Gbit / s), data transmission systems, space, satellite and mobile communication systems, radar and radio navigation systems, etc. The key components of these systems, during Microwave transistor amplifiers (TUs) are largely responsible for their sensitivity, range and other quality characteristics. They can be manufactured using various technologies: on the basis of printed wiring (PM), in the form of hybrid (GIS) and monolithic integrated circuits (MIS). However, a feature of the current stage of development of RES is the widespread introduction of microwave MIS, leading to the emergence of qualitatively new systems. This is due to the fact that the use of microwave MIS allows to improve the basic characteristics of the electronic equipment, radically reduce the size of the equipment, increase reliability, and reduce the production cost in serial production. Modern computer-aided design (CAD) microwave PPU, as a rule, allow only simulation (calculation of device characteristics for a given schematic diagram and values of elements) As a rule, the choice of the circuit itself and the microwave PPU topology is carried out on the basis of heuristic approaches using the experience of developers, repeated modeling and optimization of various variants of the obtained solutions, as well as by trial and error. This approach is time consuming, unfocused and guarantees a result. Thus, the development of methods and software for the design of microwave PPU and, in particular, microwave TU is an urgent task. In connection with the transition of the RES to a modern element base (MIS) and the development of more and more high-frequency ranges in the world, the number of developed semiconductor devices (PPD), in particular, microwave TU, has increased. However, this came into conflict with the high labor intensity and cost of designing microwave TU. In particular, the most important problem is the development of the schematic diagram and topology of the microwave TU in relation to the selected manufacturing technology. This stage requires a significant investment of time and labor and largely determines the quality characteristics of devices. At the same time, this stage of naming is formalized and automated.

Currently, there are no effective six systematic approaches and programs that make it possible to perform a simultaneous structural (circuit) and topological synthesizer of microwave PPU, taking into account the requirements for a set of characteristics, as well as exact models of elements.

Danilchenko V.I. Automated synthesis of schematic and topology diagrams microwave notch filter based on genetic algorithm. Radioengineering. 2020. V. 84. № 11(22). P. 55−58. DOI: 10.18127/j00338486-202011(22)-10. (in Russian)

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