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Journal Radioengineering №11 for 2020 г.
Article in number:
Automated measuring system for investigating temperature dependence of low-frequency noise spectra in electronic elements and structures
Type of article: scientific article
DOI: 10.18127/j00338486-202011(21)-07
UDC: 53.084.6, 53.084.872-876
Keywords: Measuring complex low-frequency noise spectroscopy power spectral density.
Authors:

A.V. Ermachikhin – Ph.D. (Phys.-Math.), Associate Professor of Department of Micro- and Nanoelectronics

V.G. Litvinov – Dr.Sc. (Phys.-Math.), Associate Professor, Leading Research Scientist,
Head of Department of Micro- and Nanoelectronics

E.P. Trusov – Post-graduate Student аспирант of Department of Micro- and Nanoelectronics

S.A. Kostryukov – Ph.D. (Phys.-Math.), Engineer of Department of Micro- and Nanoelectronics

Abstract:

Formulation of the problem. The use of noise as a source of information on the semiconductor barrier structures and devices is a promising direction in the diagnostics of semiconductor devices. It is necessary to measure noise spectra over a wide temperature range to obtain reliable results.

Goal. Development of a measuring and analytical complex for the study of the low-frequency noise spectrum temperature dependence.

Results. In this paper a measuring analytical complex for low-frequency noise spectroscopy is presented. The measuring complex is adapted for the automated study of low-frequency noise in electronic elements and structures in the frequency range 0.00110000 Hz with the constant bias voltage till 50 V and in the temperature range 7-500 К.

Practical significance. The results of testing the operation of the measuring complex are given as an example of the semiconductor barrier structure study.

Pages: 55-64
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Date of receipt: 11.09.2020