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Journal Radioengineering №1 for 2020 г.
Article in number:
Comparison of various approaches to simulation of transistor amplifiers
Type of article: scientific article
DOI: 10.18127/j00338486-202001(01)-09
UDC: 621.382.2/3
Keywords: Characteristic of common-emitter amplifier simulation
Authors:

A.E. Kitaev – Part-programming Engineer,

Nizhny Novgorod Research and Production Association named after M.V. Frunze

E-mail: kitaev_a_e@mail.ru

Abstract:

Comparison of the analytical expressions for characteristic of transistor amplifier with the experimental results and with the results of simulation in the OrCAD system is carried out in this article.

In one of previous papers of the same author the expression for the collector current of the common-emitter amplifier was received:

Functions D0 and D2 have the next view:

Ic is the collector current. Is is saturation current, φ is temperature potential and R is pure resistance of p-n barrier. Parameter «α» is similar to the coefficient in Ebers-Moll formulas that is named as «transistor current transmission coefficient». Uin is the input voltage. Rn is the resistance in the collector circuit. W is Lambert function.

Also the analytic expression for the collector current of the common-emitter amplifier with emitter ballasting was offered.

The testing of these expressions by the comparison with the experimental data and with the results of simulation in the OrCAD system is described in this article.

Pages: 74-80
References
  1. Kitaev A.E. Analiticheskoe predstavlenie kharakteristik bipolyarnykh tranzistorov. Radiotekhnika. 2017. № 10. S. 189−194. (in Russian)
  2. Kitaev A.E. Matematicheskoe modelirovanie protsessov v tranzistornykh usilitelyakh i generatorakh. Nelineinyi mir. 2018. № 4. S. 41−44. DOI 10.18127/j20700970-201804-05. (in Russian)
  3. Dubinov A.E., Dubinova I.D., Saikov S.K. W‑funktsiya Lamberta i ee primenenie v matematicheskikh zadachakh fiziki. Sarov: FGUP «RFYaTs-VNIIEF». 2006. (in Russian)
  4. Kitaev A.E. Prilozhenie funktsii Lamberta k raschetu nekotorykh tranzistornykh skhem. Nelineinyi mir. 2018. № 5. S. 16−22. DOI 10.18127/j20700970-201805-02. (in Russian)
  5. Kitaev A.E. Ispolzovanie metoda naimenshikh kvadratov dlya podbora parametrov volt-ampernoi kharakteristiki dioda. Trudy NGTU im. R.E. Alekseeva. 2018. № 2. (in Russian)
  6. Drobot S.V., Melnikov V.A., Putilin V.N. Elektronnye pribory i ustroistva. Minsk: BGUIR. 2009. (in Russian)
  7. Razevig V.D. Sistema proektirovaniya OrCAD 9.2. M.: SOLON‑R. 2001. (in Russian)
Date of receipt: 5 декабря 2019 г.